LexDanaLexDanabeta
Inventor

Yoshinori Tsuchiya

Inventor
Yokohama, JP

Overview

63→
Patents
2008–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 63 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices64%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01LSemiconductor devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H01JElectric discharge tubes or discharge lamps1%
H10BElectronic memory devices1%
PatentTitleYear
10,714,606Semiconductor device2020RE047640Semiconductor device201910,381,469Semiconductor device and method of manufacturing the same201910,121,663Semiconductor device and method for producing same201810,084,052Semiconductor device and method for manufacturing the same2018RE046271'Semiconductor device'20179,202,726'Manufacturing method of semiconductor device and dry etching apparatus for the same'20159,142,661'Semiconductor device and method for manufacturing the same'20159,105,709'Semiconductor device and method for manufacturing the same'20158,994,034'Semiconductor device and method of manufacturing the same'20158,790,983'Semiconductor device and method for manufacturing the same'20148,766,334'Semiconductor device with low resistance gate electrode and method of manufacturing the same'20148,669,562'Semiconductor device and method for manufacturing the same'20148,592,924'Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto'20138,587,060'Semiconductor device and method for manufacturing the same'20138,461,006'Semiconductor device and method for manufacturing the same'20138,367,507'Manufacturing method of semiconductor device'20138,357,580'Semiconductor device and method of manufacturing semiconductor device'20138,304,304'Semiconductor device'20128,263,452'Semiconductor device'20128,217,440'Semiconductor device and method of fabricating the same'20128,203,189'Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto'20128,174,080'Semiconductor device'20128,169,040'Semiconductor device and method for manufacturing the same'20128,168,499'Semiconductor device and method for manufacturing the same'20128,148,787'Semiconductor device and method for manufacturing the same'20128,129,792'Semiconductor device and method for manufacturing the same'20128,120,117'Semiconductor device with metal gate'20128,053,300'Semiconductor device'20117,986,014'Semiconductor device'20117,977,182'Method of manufacturing MISFET with low contact resistance'20117,964,489'Semiconductor device'20117,902,612'Semiconductor device and method of manufacturing the same'20117,863,695'Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS'20117,807,538'Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers'20107,807,990'Semiconductor device'20107,768,077'Semiconductor device and method for manufacturing the same'20107,763,946'Semiconductor device and method for manufacturing the same'20107,745,888'Method of making p-channel and n-channel MIS transistors using single film formation of TaC'20107,737,503'Semiconductor device and method for manufacturing the same'20107,727,832'Semiconductor device and method for manufacturing the same'20107,728,394'Semiconductor device and manufacturing method thereof'20107,718,521'Semiconductor device and method for manufacturing the same'20107,667,273'Semiconductor device and method for manufacturing the same'20107,642,604'Semiconductor device and fabrication method of same'20107,642,165'Semiconductor device and fabrication method thereof'20107,632,728'Method of forming TaC gate electrodes with crystal orientation ratio defining the work function'20097,612,413'Semiconductor device and manufacturing method thereof'20097,608,896'Semiconductor device'20097,601,623'Method of manufacturing a semiconductor device with a gate electrode having a laminate structure'20097,576,397'Semiconductor device'20097,569,891'Semiconductor device with reduced contact resistance and method for manufacturing the same'20097,563,678'Semiconductor device and method of manufacturing the same'20097,541,657'Semiconductor device and method for manufacturing the same'20097,514,753'Semiconductor device'20097,485,936'Semiconductor device and method of manufacturing the same'20097,456,096'Method of manufacturing silicide layer for semiconductor device'20087,432,570'Semiconductor device and manufacturing method thereof'20087,429,777'Semiconductor device with a gate electrode having a laminate structure'20087,429,776'Semiconductor device and method for manufacturing the same'20087,416,967'Semiconductor device, and method for manufacturing the same'20087,410,855'Semiconductor device'20087,391,085'Semiconductor device'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2019Patents assigned to TOSHIBA KK (57)· patent assignee history
2008–2019Based in Yokohama, JP· patent location history
2010–2015Based in Kanagawa, JP· patent location history
2012–2015Patents assigned to TSUCHIYA YOSHINORI (18)· patent assignee history
2012–2013Patents assigned to KOYAMA MASATO (10)· patent assignee history
2012Patents assigned to ICHIHARA REIKA (5)· patent assignee history
2012Based in Clifton Park, NY, US· patent location history
2015–2020Patents assigned to DENSO CORP (5)· patent assignee history
2015Based in Nagoya, JP· patent location history
2018–2020Based in Kariya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK572008–2019
TSUCHIYA YOSHINORIself182012–2015
KOYAMA MASATO102012–2013
DENSO CORP52015–2020
ICHIHARA REIKA52012
Locations
LocationPatentsSpan
Yokohama, JP442008–2019
Kanagawa, JP112010–2015
Kariya, JP42018–2020
Clifton Park, New York, US22012
Nagoya, JP12015