Inventor
David L. Chapek
Inventor
Boise, ID, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1038%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
F27BFurnaces, kilns, ovens or retorts in general15%
H10DInorganic electric semiconductor devices10%
C23CCoating metallic material3%
H01JElectric discharge tubes or discharge lamps3%
PatentTitleYear
8,288,832'Semiconductor devices including a layer of polycrystalline silicon having a smooth morphology'20128,173,517'Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structure'20127,749,860'Method for forming a self-aligned T-shaped isolation trench'20107,235,856'Trench isolation for semiconductor devices'20076,891,245'Integrated circuit formed by removing undesirable second oxide while minimally affecting a desirable first oxide'20056,747,249'System for performing thermal reflow operations under high gravity conditions'20046,597,057'Epitaxial growth in a silicon-germanium semiconductor device with reduced contamination'20036,573,478'Systems for performing thermal reflow operations under high gravity conditions'20036,444,591'Method for reducing contamination prior to epitaxial growth and related structure'20026,414,275'Method and apparatus for performing thermal reflow operations under high gravity conditions'20026,323,101'Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers'20016,288,367'Method and apparatus for performing thermal reflow operations under high gravity conditions'20016,271,152'Method for forming oxide using high pressure'20016,214,697'Trench isolation for semiconductor devices'20016,174,761'Method and apparatus for performing thermal reflow operations under high gravity conditions'20016,165,853'Trench isolation method'20006,143,631'Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon'20006,096,660'Method for removing undesirable second oxide while minimally affecting a desirable first oxide'20006,097,076'Self-aligned isolation trench'20006,096,998'Method and apparatus for performing thermal reflow operations under high gravity conditions'20006,066,576'Method for forming oxide using high pressure'20006,051,480'Trench isolation for semiconductor devices'20005,953,621'Method for forming a self-aligned isolation trench'19995,846,888'Method for in-situ incorporation of desirable impurities into high pressure oxides'19985,711,812'Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2012Patents assigned to MICRON TECHNOLOGY INC (22)· patent assignee history
1998–2010Based in Boise, ID, US· patent location history
2000–2007Based in Merrimack, NH, US· patent location history
2000–2012Based in Nashua, NH, US· patent location history
2002–2003Patents assigned to NEWPORT FAB LLC (2)· patent assignee history
2002–2003Based in Aliso Viejo, CA, US· patent location history
2012Patents assigned to CHAPEK DAVID L (2)· patent assignee history
2012Patents assigned to GONZALEZ FERNANDO (1)· patent assignee history
2012Patents assigned to THAKUR RANDHIR P S (1)· patent assignee history
2012Based in Aliso Viego, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 22 | 1998–2012 |
| CHAPEK DAVID Lself | 2 | 2012 |
| NEWPORT FAB LLC | 2 | 2002–2003 |
| GONZALEZ FERNANDO | 1 | 2012 |
| THAKUR RANDHIR P S | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 16 | 1998–2010 |
| Merrimack, NH, US | 4 | 2000–2007 |
| Nashua, NH, US | 2 | 2000–2012 |
| Aliso Viejo, California, US | 2 | 2002–2003 |
| Aliso Viego, California, US | 1 | 2012 |