Inventor
Xianjin WAN
Inventor
CN
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1035%
H01LSemiconductor devices30%
H10BElectronic memory devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
PatentTitleYear
12,394,751Method of forming semiconductor structure202512,185,550Through array contact structure of three-dimensional memory device202411,956,953Joint opening structures of three-dimensional memory devices and methods for forming the same202411,785,776Through array contact structure of three-dimensional memory device202311,715,718Bonding contacts having capping layer and method for forming the same202311,545,505Through array contact structure of three-dimensional memory device202311,482,532Joint opening structures of three-dimensional memory devices and methods for forming the same202211,177,231Bonding contacts having capping layer and method for forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to YANGTZE MEMORY TECH CO LTD (8)· patent assignee history
2021–2025Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 8 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 8 | 2021–2025 |