Inventor
Ritsuko Kawasaki
Inventor
Kanagawa, JP
Overview
Patents· 51 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices49%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B23KSoldering or unsoldering4%
H10KOrganic electric solid-state devices4%
PatentTitleYear
8,541,844'Semiconductor device and manufacturing method thereof'20137,977,750'Semiconductor device and manufacturing method thereof'20117,679,131'Semiconductor device, manufacturing method thereof, and electronic device'20107,638,846'Semiconductor device and manufacturing method thereof'20097,635,866'Semiconductor device and its manufacturing method'20097,510,915'Semiconductor device and method of fabricating thereof'20097,476,937'Semiconductor device and method of fabricating the same'20097,476,577'Semiconductor device and method of fabricating the same'20097,473,622'Laser annealing method and manufacturing method of a semiconductor device'20097,456,371'Laser apparatus and laser annealing method'20087,419,861'Laser irradiation apparatus, laser irradiation method, semiconductor device, and method of manufacturing a semiconductor device'20087,351,617'Semiconductor device and a method of manufacturing the same'20087,338,913'Semiconductor device, manufacturing method thereof, and electronic device'20087,320,905'Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same'20087,217,605'Laser irradiation method and method of manufacturing a semiconductor device'20077,179,698'Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device'20077,176,068'Semiconductor device and manufacturing method thereof'20077,132,687'Semiconductor device and method of manufacturing the same'20067,132,686'Semiconductor device and method of fabricating the same'20067,129,522'Semiconductor device and its manufacturing method'20067,122,409'Semiconductor device and a method of manufacturing the same'20067,064,016'Semiconductor device and method of fabricating thereof'20067,015,505'Semiconductor device and method of fabricating the same'20066,974,731'Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device'20056,927,109'Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device'20056,844,249'Method for manufacturing a semiconductor device using laser light'20056,838,324'Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same'20056,809,382'EL display device having a pixel portion and a driver circuit'20046,780,687'Method of manufacturing a semiconductor device having a heat absorbing layer'20046,753,212'Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device'20046,746,901'Semiconductor device and method of fabricating thereof'20046,744,008'Laser apparatus and laser annealing method'20046,730,550'Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device'20046,709,902'Semiconductor device and manufacturing method thereof'20046,677,221'Semiconductor device and the fabricating method therefor'20046,653,657'Semiconductor device and a method of manufacturing the same'20036,645,826'Semiconductor device and method of fabricating the same'20036,624,013'Method for manufacturing a semiconductor device'20036,614,076'EL display device having a pixel portion and a driver circuit'20036,599,788'Semiconductor device and method of fabricating the same'20036,555,875'EL display device with a TFT'20036,548,370'Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces'20036,426,245'Method for manufacturing a semiconductor device'20026,424,012'Semiconductor device having a tantalum oxide blocking film'20026,410,368'Method of manufacturing a semiconductor device with TFT'20026,380,011'Semiconductor device and a method of manufacturing the same'20026,380,558'Semiconductor device and method of fabricating the same'20026,362,507'Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate'20026,346,730'Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate'20026,281,552'Thin film transistors having ldd regions'20016,246,070'Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2013Patents assigned to SEMICONDUCTOR ENERGY LAB (51)· patent assignee history
2001–2013Based in Kanagawa, JP· patent location history
2002–2004Patents assigned to SHARP KK (3)· patent assignee history
2004–2009Based in Atsugi, JP· patent location history
2007Based in Tokyo, JP· patent location history
2008–2009Based in Machida, JP· patent location history
2013Patents assigned to KASAHARA KENJI (1)· patent assignee history
2013Patents assigned to KAWASAKI RITSUKO (1)· patent assignee history
2013Patents assigned to KITAKADO HIDEHITO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 51 | 2001–2013 |
| SHARP KK | 3 | 2002–2004 |
| KASAHARA KENJI | 1 | 2013 |
| KAWASAKI RITSUKOself | 1 | 2013 |
| KITAKADO HIDEHITO | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 38 | 2001–2013 |
| Atsugi, JP | 8 | 2004–2009 |
| Machida, JP | 3 | 2008–2009 |
| Tokyo, JP | 2 | 2007 |