Inventor
Neil J. Bassom
Inventor
Hamilton, MA, US
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps49%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
C23CCoating metallic material6%
C23FNon-mechanical removal of metallic material from surface4%
C25DProcesses for the electrolytic or electrophoretic production of coatings4%
C25FProcesses for the electrolytic removal of materials from objects4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B08BCleaning in general2%
F28DHeat-exchange apparatus, not provided for in another subclass, in which the heat-exchange media do not come into direct contact2%
G01BMeasuring length, thickness or similar linear dimensions2%
PatentTitleYear
10,720,354System and method for aligning light-transmitting birefringent workpieces202010,573,485Tetrode extraction apparatus for ion source202010,347,457Dynamic temperature control of an ion source201910,221,476Coating insulating materials for improved life20199,887,060'Ceramic ion source chamber'20189,773,636'Apparatus and method for generating high current negative hydrogen ion beam'20179,741,522'Ceramic ion source chamber'20179,530,615'Techniques for improving the performance and extending the lifetime of an ion source'20169,396,902'Gallium ION source and materials therefore'20169,287,079'Apparatus for dynamic temperature control of an ion source'20169,275,820'Gas coupled arc chamber cooling'20169,187,832'Extended lifetime ion source'20159,142,392'Self-cleaning radio frequency plasma source'20159,134,074'Method and apparatus for thermal control of ion sources and sputtering targets'20159,018,829'Excited gas injection for ion implant control'20158,937,003'Technique for ion implanting a target'20158,759,788'Ion source'20148,501,624'Excited gas injection for ion implant control'20138,455,839'Cleaning of an extraction aperture of an ion source'20138,330,127'Flexible ion source'20128,163,641'System for modifying small structures'20128,049,192'Apparatus and system for controlling ion ribbon beam uniformity in an ion implanter'20118,022,371'Cathode having electron production and focusing grooves, ion source and related method'20118,003,959'Ion source cleaning end point detection'20117,723,699'Cathode having electron production and focusing grooves, ion source and related method'20107,674,706'System for modifying small structures using localized charge transfer mechanism to remove or deposit material'20106,863,787'Dummy copper deprocessing'20056,838,380'Fabrication of high resistivity structures using focused ion beams'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2012Patents assigned to FEI CO (4)· patent assignee history
2005–2020Based in Hamilton, MA, US· patent location history
2010–2016Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (16)· patent assignee history
2012–2016Patents assigned to BASSOM NEIL J (6)· patent assignee history
2012–2016Patents assigned to CHANEY CRAIG R (5)· patent assignee history
2016–2019Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN SEMICONDUCTOR EQUIPMENT | 16 | 2010–2016 |
| BASSOM NEIL Jself | 6 | 2012–2016 |
| VARIAN SEMICONDUCTOR EQUIPMENT ASS INC | 6 | 2016–2019 |
| CHANEY CRAIG R | 5 | 2012–2016 |
| FEI CO | 4 | 2005–2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hamilton, Massachusetts, US | 28 | 2005–2020 |