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Inventor

Takaaki Shiota

Inventor
Tokyo, JP

Overview

8→
Patents
2002–2011
Patent span
Electricity
Primary field (CPC H)

Patents· 8 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1047%
C30BSingle-crystal growth27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10DInorganic electric semiconductor devices7%
Y10TTechnical subjects covered by former us classification7%
PatentTitleYear
7,960,253'Thin silicon wafer with high gettering ability and production method thereof'20117,632,349'Silicon wafer surface defect evaluation method'20097,615,467'Method for manufacturing SOI wafer'20097,582,540'Method for manufacturing SOI wafer'20097,122,082'Silicon wafer and manufacturing method thereof'20066,682,597'Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer'20046,663,708'Silicon wafer, and manufacturing method and heat treatment method of the same'20036,428,619'Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2004Patents assigned to MITSUBISHI MATERIAL SILICON (3)· patent assignee history
2002–2011Based in Tokyo, JP· patent location history
2006Patents assigned to SUMITOMO MITSUBISHI SILICON (1)· patent assignee history
2006Based in Noda, JP· patent location history
2009–2011Patents assigned to SUMCO CORP (4)· patent assignee history
2009Based in Karatsu, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMCO CORP42009–2011
MITSUBISHI MATERIAL SILICON32002–2004
SUMITOMO MITSUBISHI SILICON12006
Locations
LocationPatentsSpan
Tokyo, JP52002–2011
Karatsu, JP22009
Noda, JP12006