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Inventor

Jiyoung Kim

Inventor
Yongin-si, KR

Overview

6→
Patents
2013–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices24%
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
G11CStatic stores10%
B82YSpecific uses or applications of nanostructures5%
PatentTitleYear
10,910,378Semiconductor memory devices202110,903,216Semiconductor memory device and method of fabricating the same202110,886,375Semiconductor device having buried gate structure and method of fabricating the same202110,109,747Semiconductor memory devices and methods of fabricating the same20189,130,054'Semiconductor memory devices and methods of fabricating the same'20158,599,622'Charge trap flash memory device and an erasing method thereof'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2013Patents assigned to CHOE BYEONG-IN (1)· patent assignee history
2013Patents assigned to KANG CHANGSEOK (1)· patent assignee history
2013Patents assigned to KIM HANSOO (1)· patent assignee history
2013Patents assigned to KIM JUHYUNG (1)· patent assignee history
2013–2021Based in Yongin-si, KR· patent location history
2015Based in Gyeonggi-do, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD62013–2021
CHOE BYEONG-IN12013
KANG CHANGSEOK12013
KIM HANSOO12013
KIM JUHYUNGself12013
Locations
LocationPatentsSpan
Yongin-si, KR52013–2021
Gyeonggi-do, KR12015