Inventor
Hisashi Takemura
Inventor
Tokyo, JP
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps32%
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H03KPulse technique5%
B82YSpecific uses or applications of nanostructures3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
7,611,934'Semiconductor device and method of fabricating the same'20097,485,923'SOI semiconductor device with improved halo region and manufacturing method of the same'20097,247,910'MOSFET formed on a silicon-on-insulator substrate having a SOI layer and method of manufacturing'20077,211,517'Semiconductor device and method that includes reverse tapering multiple layers'20076,975,001'Semiconductor device and method of fabricating the same'20056,933,569'SOI MOSFET'20056,351,059'Field-emission type cold cathode and application thereof'20026,084,341'Electric field emission cold cathode'20006,060,823'Field emission cold cathode element'20006,043,103'Field-emission cold cathode and method of manufacturing same'20006,031,322'Field emission cold cathode having a serial resistance layer divided into a plurality of sections'20006,024,618'Method of operating electron tube'20006,018,215'Field emission cold cathode having a cone-shaped emitter'20005,924,903'Method of fabricating a cold cathode for field emission'19995,910,701'Field-emission cold cathode and manufacturing method for same'19995,717,275'Multi-emitter electron gun of a field emission type capable of emitting electron beam with its divergence suppressed'19985,666,020'Field emission electron gun and method for fabricating the same'19975,627,402'Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device'19975,620,350'Method for making a field-emission type electron gun'19975,587,326'Method of forming bipolar junction transistor of epitaxial planar type'19965,576,221'Manufacturing method of semiconductor device'19965,506,442'Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device'19965,397,731'Method of manufacturing semiconductor integrated circuit device'19955,374,846'Bipolar transistor with a particular base and collector regions'19945,099,304'Semiconductor device with insulating isolation groove'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2009Patents assigned to NEC CORP (25)· patent assignee history
1992–2009Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 25 | 1992–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 25 | 1992–2009 |