LexDanaLexDanabeta
Inventor

Shigetoshi Sugawa

Inventor
Atsugi, JP

Overview

170→
Patents
1988–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 170 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation21%
H04NPictorial communication, e.g. television18%
H10DInorganic electric semiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
H01LSemiconductor devices4%
H10BElectronic memory devices4%
C23CCoating metallic material4%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
10,794,760Optical sensor device202010,720,467Optical sensor and signal readout method therefor, and solid-state image pickup device and signal readout method therefor202010,553,626Solid-state light-receiving device for ultraviolet light202010,408,742Optical gas concentration measuring method by forming a differential signal using lights with different absorbabilities to a raw material in a gas flow path using a time-sharing method201910,324,028Optical concentration measuring method201910,241,034Concentration measuring method201910,200,641Optical sensor and solid-state imaging device, and signal reading methods therefor201910,154,222Optical sensor, signal reading method therefor, solid-state imaging device, and signal reading method therefor201810,126,166Solid light-receiving device for UV light20189,568,364'Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device'20179,429,471'Photodiode array for spectrometric measurements and spectrometric measurement system'20169,420,210'Solid-state image sensor for capturing high-speed phenomena and drive method for the same'20169,338,378'Solid-state imaging device having plural reset devices for resetting signal lines'20169,294,698'Solid-state image pickup apparatus'20169,264,637'Solid-state image pickup apparatus'20169,257,479'Solid state image pickup device and manufacturing method therefor'20169,240,505'Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid'20169,214,489'Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device'20159,190,337'Etching method'20159,153,658'Semiconductor device and method of manufacturing the same'20159,137,469'Solid-state imaging device'20159,083,901'Solid-state image pickup device and method of resetting the same'20159,030,582'Solid state image sensor and method for driving the same'20158,988,571'Solid-state image sensor'20158,963,760'Analog-to-digital converter and solid-state imaging device'20158,633,395'Multilayer wiring board'20148,569,805'Solid-state image sensor and method for producing the same'20138,541,731'Solid-state image sensor'20138,530,947'Solid-state image sensor'20138,416,473'Solid-state imaging device'20138,395,193'Solid state image pickup device and manufacturing method therefor'20138,314,449'MIS transistor and CMOS transistor'20128,269,838'Solid-state image sensor and imaging device'20128,248,677'Solid-state imaging device'20128,184,191'Optical sensor and solid-state imaging device'20128,183,670'Semiconductor device and method of manufacturing the same'20128,138,528'Solid state image pickup device and manufacturing method therefor'20128,120,016'Imaging device'20128,120,682'Solid-state image pickup device and method of resetting the same'20128,093,918'Electronic device identifying method and electronic device comprising identification means'20127,973,835'Solid-state image pickup apparatus'20117,965,097'Test circuit, wafer, measuring apparatus, measuring method, device manufacturing method and display apparatus'20117,936,487'Solid-state imaging device'20117,863,925'Test circuit, wafer, measuring apparatus, and measuring method'20117,864,384'Solid-state imaging device'20117,848,828'Method and apparatus for managing manufacturing equipment, method for manufacturing device thereby'20107,820,467'Imaging device and method that cancels voltage signal noise based on pre-saturated charges and supersaturated charges'20107,821,560'Optical sensor, solid-state imaging device, and operating method of solid-state imaging device'20107,812,595'Electronic device identifying method'20107,800,673'Solid-state imaging device, optical sensor and method of operating solid-state imaging device'20107,795,106'Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof'20107,774,081'Manufacturing system, manufacturing method, managing apparatus, managing method and computer readable medium'20107,759,762'Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof'20107,724,292'Color filter array for a CMOS sensor for generating a color signal in an image pickup apparatus'20107,718,484'Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film'20107,705,373'Solid state image pickup device and manufacturing method therefor'20107,670,454'Plasma processing apparatus'20107,663,734'Pattern writing system and pattern writing method'20107,616,355'Solid-state imaging device'20097,566,936'Complementary MIS device'20097,518,143'Solid-state imaging device, line sensor and optical sensor and method of operating solid-state imaging device'20097,474,383'Mask making method, mask making device, and mask drawing device'20097,459,720'Single crystal wafer and solar battery cell'20087,456,882'Image pickup device'20087,439,121'Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device'20087,424,595'System for managing circuitry of variable function information processing circuit and method for managing circuitry of variable function information processing circuit'20087,411,274'Silicon semiconductor substrate and its manufacturing method'20087,404,991'Device and control method for micro wave plasma processing'20087,329,609'Substrate processing method and substrate processing apparatus'20087,315,064'Bonded wafer and method of producing bonded wafer'20087,274,394'Solid state image pickup device and manufacturing method therefor'20077,239,084'Organic EL device and liquid crystal display'20077,202,534'Complementary MIS device'20077,179,746'Method of surface treatment for manufacturing semiconductor device'20077,142,233'Image pickup element'20067,141,756'Microwave plasma processing apparatus, plasma ignition method, plasma forming method, and plasma processing method'20067,129,985'Image sensing apparatus arranged on a single substrate'20067,115,184'Plasma processing device'20067,110,030'Solid state image pickup apparatus'20067,109,083'Flash memory device and a fabrication process thereof, method of forming a dielectric film'20067,097,735'Plasma processing device'20067,083,701'Device and method for plasma processing, and slow-wave plate'20067,052,974'Bonded wafer and method of producing bonded wafer'20067,026,681'Flash memory device and fabrication process thereof, method of forming a dielectric film'20067,015,964'Solid-state image pickup device and method of resetting the same'20067,016,089'Amplification-type solid state imaging device with reduced shading'20067,012,311'Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof'20067,001,855'Flash memory device and fabrication process thereof, method of forming a dielectric film'20066,998,354'Flash memory device and fabrication process thereof, method of forming a dielectric film'20066,998,355'Flash memory device and a fabrication process thereof, method of forming a dielectric film'20066,992,008'Method of making a substrate having buried structure and method for fabricating a display device including the substrate'20066,975,018'Semiconductor device'20056,963,372'Solid-state image sensing apparatus and method of operating the same'20056,958,094'Single crystal cutting method'20056,946,637'Image sensing device using MOS type image sensing elements'20056,903,393'Semiconductor device fabricated on surface of silicon having <110> direction of crystal plane and its production method'20056,898,310'Image signal processing method, image signal processing system, storage medium, and image sensing apparatus'20056,850,278'Solid-state image pickup apparatus'20056,846,753'Flash memory device and a fabrication process thereof, method of forming a dielectric film'20056,838,394'Flash memory device and a fabrication process thereof, method of forming a dielectric film'20056,839,084'Image pickup apparatus capable of switching modes based on signals from photoelectric conversion pixels'20056,831,685'Solid-state image pickup element'20046,815,720'Substrate having buried structure, display device including the substrate, method of making the substrate and method for fabricating the display device'20046,784,928'Solid state image pickup device and signal reading method thereof'20046,757,016'Image pickup apparatus with color filter array and means for adding and subtracting signals'20046,683,591'Method for driving liquid crystal display device'20046,684,000'Image sensing device capable of outputting image signals by blocks and processing circuit which processes image signals by blocks'20046,669,825'Method of forming a dielectric film'20036,670,990'Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor'20036,661,459'Solid state image pickup device with LDD structure and reset transistor'20036,633,334'Solid-state image pickup device with optimum layout of building components around a photoelectric conversion portion'20036,605,850'Solid-state image pickup device using layers having different refractive indices'20036,587,603'Sensor unit capable of outputting image signals by blocks and processing circuit which processes image signals by blocks'20036,567,571'Image sensing device capable of outputting image signals by blocks and processing circuit which processes image signals by blocks'20036,559,674'Variable function information processor'20036,551,948'Flash memory device and a fabrication process thereof, method of forming a dielectric film'20036,437,309'Photoelectric transducer'20026,188,094'Solid-state image pickup device'20016,163,024'Photoelectric transducer'20006,132,800'Production process of color liquid crystal display device'20006,130,712'Eliminating the influence of random noise produced by an optical black pixel on a reference output'20006,127,692'Photoelectric conversion apparatus'20006,118,115'Photoelectric conversion apparatus'20006,031,514'Method for driving liquid crystal display device'20005,998,854'Semiconductor device'19995,917,960'Image correlator, an image processing apparatus using the same, and a signal adder used in the image correlator'19995,869,851'Photoelectric conversion device with graded band gap and carrier concentration'19995,861,655'Photoelectric conversion apparatus and image reading apparatus with good crosstalk characteristics'19995,827,755'Liquid crystal image display unit and method for fabricating semiconductor optical member'19985,801,373'Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate'19985,789,790'Semiconductor device'19985,744,849'Photoelectric converting device and image processing apparatus using the same'19985,723,877'Photoelectric conversion apparatus'19985,694,145'Liquid crystal device and driving method therefor'19975,691,794'Liquid crystal display device'19975,686,734'Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device'19975,677,201'Laminated solid-state image pickup device and a method for manufacturing the same'19975,644,370'Liquid crystal display apparatus with a plural layer connection between the TFT drains and the pixel electrodes'19975,644,373'Liquid crystal device with substrates of different materials and similar thermal expansion coefficients'19975,600,152'Photoelectric conversion device and its manufacturing method'19975,557,121'Laminated solid-state image sensing apparatus and method of manufacturing the same'19965,530,266'Liquid crystal image display unit and method for fabricating semiconductor optical member'19965,513,028'Liquid crystal display with display area having same height as peripheral portion thereof'19965,508,550'Semiconductor device including a lateral-type transistor'19965,481,124'Laminated solid-state image pickup device'19965,453,611'Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip'19955,434,441'Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness'19955,414,275'Photoelectric converting device and image processing apparatus utilizing the same'19955,412,240'Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness'19955,401,952'Signal processor having avalanche photodiodes'19955,283,428'Photoelectric converting device and information processing apparatus employing the same'19945,260,560'Photoelectric transfer device'19935,245,201'Photoelectric converting device and image processing apparatus utilizing the same'1993RE034309'Image sensor device having plural photoelectric converting elements'19935,155,351'Photoelectric transfer device'19925,060,042'Photoelectric conversion apparatus with reresh voltage'19915,040,041'Semiconductor device and signal processing device having said device provided therein'19915,019,702'Photoelectric transducer apparatus having a plurality of transducer elements and a plurality of capacitor elements'19914,972,243'Photoelectric conversion apparatus with shielded cell'19904,967,067'Signal read-out circuit which lowers diffusion capacitance by limiting emitting current with resistive elements'19904,962,412'Photoelectric conversion apparatus without isolation regions'19904,879,470'Photoelectric converting apparatus having carrier eliminating means'19894,870,266'Photo signal storing sensor device'19894,866,293'Photoelectric converting apparatus to prevent the outflow of excess carriers'19894,847,668'Device and method of photoelectrically converting light into electrical signal'19894,835,404'Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors'19894,831,454'Image sensor device having plural photoelectric converting elements'19894,814,846'Photoelectric converting device'19894,810,896'Photoelectric conversion device with reduced fixed pattern noises'19894,751,559'Photoelectric conversion device'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2016Patents assigned to CANON KK (88)· patent assignee history
1988–2016Based in Atsugi, JP· patent location history
1989–2011Based in Kanagawa, JP· patent location history
1989–2005Based in Tokyo, JP· patent location history
1990–2016Patents assigned to SUGAWA SHIGETOSHI (29)· patent assignee history
2003–2016Patents assigned to OHMI TADAHIRO (18)· patent assignee history
2003–2020Based in Sendai, JP· patent location history
2003–2020Based in Miyagi, JP· patent location history
2005–2010Patents assigned to TOKYO ELECTRON LTD (12)· patent assignee history
2012–2020Patents assigned to UNIV TOHOKU (26)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CANON KK881988–2016
SUGAWA SHIGETOSHIself291990–2016
UNIV TOHOKU262012–2020
OHMI TADAHIRO182003–2016
TOKYO ELECTRON LTD122005–2010
Locations
LocationPatentsSpan
Atsugi, JP841988–2016
Sendai, JP482003–2020
Miyagi, JP302003–2020
Kanagawa, JP41989–2011
Tokyo, JP31989–2005