Inventor
Ghulam Hasnain
Inventor
Palo Alto, CA, US
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers22%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H05BElectric heating8%
H01LSemiconductor devices8%
F21KNon-electric light sources using luminescence7%
F21VFunctional features or details of lighting devices or systems thereof7%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted6%
H10KOrganic electric solid-state devices6%
H05KPrinted circuits5%
PatentTitleYear
10,966,300Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs202110,551,008LED-based replacement for fluorescent light source202010,334,674Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs201910,132,450LED-based replacement for fluorescent light source20189,913,333'Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs'20189,634,062'Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs'20179,599,287'LED-based replacement for fluorescent light source'20179,472,593'Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs'2016RE046155'Series connected segmented LED'20169,419,183'Nanowire sized opto-electronic structure and method for manufacturing the same'20168,937,295'Nanowire sized opto-electronic structure and method for manufacturing the same'20158,668,361'LED-based replacement for fluorescent light source'20148,455,332'Method and apparatus for manufacturing LED devices using laser scribing'20138,436,549'Drive circuit for a color temperature tunable LED light source'20138,350,485'Modular LED light bulb'20138,350,251'Nanowire sized opto-electronic structure and method for manufacturing the same'20138,338,848'LED structure'20128,324,636'Method and apparatus for manufacturing LED devices using laser scribing'20128,207,543'Series connected segmented LED'20128,084,775'Light sources with serially connected LED segments including current blocking diodes'20118,035,284'Distributed LED-based light source'20118,026,527'LED structure'20117,982,409'Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs'20117,956,546'Modular LED light bulb'20117,939,839'Series connected segmented LED'20117,915,621'Inverted LED structure with improved light extraction'20117,741,134'Inverted LED structure with improved light extraction'20107,345,324'Light emitting diodes with graded composition active regions'20086,955,933'Light emitting diodes with graded composition active regions'20056,853,663'Efficiency GaN-based light emitting devices'20056,680,963'Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement'20046,553,053'Vertical cavity surface emitting laser having improved light output function'20036,534,331'Method for making a vertical-cavity surface emitting laser with improved current confinement'20036,526,082'P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction'20035,892,787'N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same'19995,866,936'Mesa-structure avalanche photodiode having a buried epitaxial junction'19995,843,804'Method of making avalanche photodiodes with epitaxially-regrown guard rings'19985,610,416'Avalanche photodiode with epitaxially regrown guard rings'19975,136,603'Self-monitoring semiconductor laser device'19925,023,685'Quantum-well radiation-interactive device, and methods of radiation detection and modulation'19914,883,770'Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–1999Patents assigned to HEWLETT PACKARD CO (5)· patent assignee history
1991–2016Patents assigned to HASNAIN GHULAM (11)· patent assignee history
1991–1992Based in Edison, NJ, US· patent location history
1997–1999Based in Stanford, CA, US· patent location history
1999–2003Based in Union City, CA, US· patent location history
2003–2021Based in Palo Alto, CA, US· patent location history
2010–2021Patents assigned to BRIDGELUX INC (23)· patent assignee history
2011–2016Patents assigned to LESTER STEVEN D (3)· patent assignee history
2011–2020Based in Livermore, CA, US· patent location history
2013–2016Patents assigned to GLO AB (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| BRIDGELUX INC | 23 | 2010–2021 |
| HASNAIN GHULAMself | 11 | 1991–2016 |
| HEWLETT PACKARD CO | 5 | 1989–1999 |
| GLO AB | 3 | 2013–2016 |
| LESTER STEVEN D | 3 | 2011–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 21 | 2003–2021 |
| Livermore, California, US | 11 | 2011–2020 |
| Stanford, California, US | 3 | 1997–1999 |
| Union City, California, US | 2 | 1999–2003 |
| Edison, New Jersey, US | 2 | 1991–1992 |