Inventor
Mark Yam
Inventor
Monte Sereno, CA, US
Overview
Patents· 47 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
B23KSoldering or unsoldering15%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light14%
C23CCoating metallic material9%
H01LSemiconductor devices8%
G02BOptical elements, systems or apparatus6%
H10DInorganic electric semiconductor devices5%
C21DModifying the physical structure of ferrous metals2%
G05BControl or regulating systems in general2%
Y02PClimate change mitigation technologies in the production or processing of goods2%
PatentTitleYear
10,857,623Annealing apparatus using two wavelengths of radiation202010,840,100Method of thermal processing structures formed on a substrate202010,141,191Method of thermal processing structures formed on a substrate20189,839,976'Annealing apparatus using two wavelengths of radiation'20179,737,959'Thermal processing by scanning a laser line beam'20178,951,348'Single-chamber sequential curing of semiconductor wafers'20158,907,247'Annealing apparatus using two wavelengths of laser radiation'20148,890,024'Annealing apparatus using two wavelengths of continuous wave laser radiation'20148,829,393'Scanned laser light source'20148,765,618'Annealing apparatus using two wavelengths of continuous wave laser radiation'20148,653,408'Annealing apparatus using two wavelengths of continuous wave laser radiation'20148,518,838'Method of thermal processing structures formed on a substrate'20138,288,685'Thermal flux processing by scanning a focused line beam'20128,242,407'Annealing apparatus using two wavelengths of continuous wave laser radiation'20128,178,819'Thermal flux processing by scanning a focused line beam'20128,137,465'Single-chamber sequential curing of semiconductor wafers'20127,875,829'Thermal flux processing by scanning a focused line beam'20117,872,209'Thermal flux processing by scanning a focused line beam'20117,772,134'Method of annealing using two wavelengths of continuous wave laser radiation'20107,611,976'Gate electrode dopant activation method for semiconductor manufacturing'20097,595,208'Method of laser annealing using two wavelengths of radiation'20097,569,463'Method of thermal processing structures formed on a substrate'20097,279,721'Dual wavelength thermal flux laser anneal'20077,262,106'Absorber layer for DSA processing'20077,109,087'Absorber layer for DSA processing'20067,078,302'Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal'20067,041,931'Stepped reflector plate'20066,987,240'Thermal flux processing by scanning'20066,721,605'Multi-computer chamber control system, method and medium'20046,500,266'Heater temperature uniformity qualification tool'20026,424,880'Multi-computer chamber control system, method and medium'20026,406,179'Sensor for measuring a substrate temperature'20026,345,909'Apparatus for infrared pyrometer calibration in a thermal processing system'20026,226,453'Temperature probe with fiber optic core'20016,183,130'Apparatus for substrate temperature measurement using a reflecting cavity and detector'20016,179,465'Method and apparatus for infrared pyrometer calibration in a thermal processing system using multiple light sources'20016,179,466'Method and apparatus for measuring substrate temperatures'20016,151,446'Apparatus and method for thermally processing substrates including a processor using multiple detection signals'20006,086,245'Apparatus for infrared pyrometer calibration in a thermal processing system'20006,056,433'Method and apparatus for infrared pyrometer calibration in a thermal processing system'20006,007,241'Apparatus and method for measuring substrate temperature'19995,938,335'Self-calibrating temperature probe'19995,848,842'Method of calibrating a temperature measurement system'19985,820,261'Method and apparatus for infrared pyrometer calibration in a rapid thermal processing system'19985,762,419'Method and apparatus for infrared pyrometer calibration in a thermal processing system'19985,755,511'Method and apparatus for measuring substrate temperatures'19985,660,472'Method and apparatus for measuring substrate temperatures'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2020Patents assigned to APPLIED MATERIALS INC (45)· patent assignee history
1997–2002Based in San Jose, CA, US· patent location history
2002–2020Based in Monte Sereno, CA, US· patent location history
2012–2018Patents assigned to YAM MARK (12)· patent assignee history
2012–2018Patents assigned to MAYUR ABHILASH J (9)· patent assignee history
2012–2018Patents assigned to JENNINGS DEAN (7)· patent assignee history
2012–2014Patents assigned to LIANG HAIFAN (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 45 | 1997–2020 |
| YAM MARKself | 12 | 2012–2018 |
| MAYUR ABHILASH J | 9 | 2012–2018 |
| JENNINGS DEAN | 7 | 2012–2018 |
| LIANG HAIFAN | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Monte Sereno, California, US | 31 | 2002–2020 |
| San Jose, California, US | 16 | 1997–2002 |