Inventor
Byung-Jun Park
Inventor
Yongin-si, KR
Overview
Patents· 77 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation18%
H10BElectronic memory devices15%
H10DInorganic electric semiconductor devices13%
H01LSemiconductor devices6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
F16BDevices for fastening or securing constructional elements or machine parts together, e.g. nails, bolts, circlips, clamps, clips or wedges2%
B21JForging2%
B21KMaking forged or pressed metal products, e.g. horse-shoes, rivets, bolts or wheels2%
PatentTitleYear
10,753,872Apparatus and method for measuring fluorescence lifetime202010,644,053Image sensor202010,629,643Integrated circuit devices having through-silicon via structures202010,304,887Image sensor201910,229,949Via structures including etch-delay structures and semiconductor devices having via plugs201910,072,719Brake disk having double cooling structure201810,020,437Superconductive current limiting element of current limiter and method for manufacturing superconductive current limiting element of current limiter20189,728,572'Via structures including etch-delay structures and semiconductor devices having via plugs'20179,608,026'Through via structure, methods of forming the same'20179,455,284'Stack type image sensor'20169,165,974'Electronic devices including multiple semiconductor layers'20159,048,354'Methods of forming a through via structure'20158,944,341'Diffuser structure and manufacturing method thereof'20158,916,911'Semiconductor devices having backside illuminated image sensors'20148,858,147'Self-piercing rivet'20148,851,815'Self-piercing rivet'20148,851,814'Self-piercing rivet'20148,794,894'Self-piercing rivet'20148,759,137'Methods of fabricating CMOS image sensors'20148,736,009'Image sensor and method of fabricating the same'20148,691,617'Method of manufacturing image sensor having backside illumination structure'20148,471,300'Image sensor devices including electrically conductive reflectors'20138,426,938'Image sensor and method of fabricating the same'20138,217,484'Image sensor and method of fabricating the same'20128,207,590'Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods'20128,170,568'Apparatus and method of setting multi-channels in network system'20128,154,062'CMOS image sensors and related devices and fabrication methods'20128,134,264'Large capacity hollow-type flywheel energy storage device'20128,119,439'Methods of manufacturing an image sensor having an air gap'20128,043,927'Method of manufacturing a CMOS image sensor'20117,943,976'CMOS image sensor and manufacturing method thereof'20117,928,488'Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels'20117,803,653'Method of manufacturing image sensor'20107,754,596'Semiconductor device preventing electrical short and method of manufacturing the same'20107,756,211'Channel estimation method in a MIMO wireless communication system'20107,659,646'Outer rotor superconductor journal bearing'20107,651,908'Methods of fabricating image sensors'20107,622,319'CMOS image sensor and manufacturing method thereof'20097,598,552'Image sensor having improved sensitivity and method of manufacturing the same'20097,521,804'Semiconductor device preventing electrical short and method of manufacturing the same'20097,518,172'Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same'20097,491,990'CMOS image sensors for preventing optical crosstalk'20097,446,701'Method and apparatus for tracking location of user equipment by using integrated GPS and TDOA scheme'20087,413,921'Method of manufacturing image sensor'20087,411,173'Image sensor and method of manufacturing the same'20087,399,689'Methods for manufacturing semiconductor memory devices using sidewall spacers'20087,342,275'Semiconductor device and method of manufacturing the same'20087,342,211'Image sensor and method of manufacturing the same'20087,339,211'Semiconductor device and method for fabricating the same'20087,298,323'Apparatus and method for locating user equipment using global positioning system and dead reckoning'20077,283,815'Method for maximizing gain of received signal in a multimedia broadcast/multicast service system'20077,192,822'Method of fabricating CMOS type semiconductor device having dual gates'20077,105,417'Method for fabricating capacitor of semiconductor device'20067,052,983'Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact pads'20067,026,208'Methods of forming integrated circuit devices including cylindrical capacitors having supporters between lower electrodes'20066,949,429'Semiconductor memory device and method for manufacturing the same'20056,914,286'Semiconductor memory devices using sidewall spacers'20056,864,179'Semiconductor memory device having COB structure and method of fabricating the same'20056,858,505'Methods of forming transistor structures including separate anti-punchthrough layers'20056,803,669'Integrated circuits having self-aligned metal contact structures'20046,759,704'Method for fabricating semiconductor device, and semiconductor device, having storage node contact plugs'20046,730,975'DRAM device'20046,727,542'Semiconductor memory device and method for manufacturing the same'20046,720,269'Semiconductor device having a self-aligned contact structure and methods of forming the same'20046,710,466'Method of fabricating integrated circuit having self-aligned metal contact structure'20046,703,657'DRAM cell having electrode with protection layer'20046,670,663'DRAM cell capacitor and manufacturing method thereof'20036,638,805'Method of fabricating a DRAM semiconductor device'20036,534,813'Semiconductor device having a self-aligned contact structure and methods of forming the same'20036,528,368'Method for fabricating semiconductor device, and semiconductor device, having storage node contact flugs'20036,489,195'Method for fabricating DRAM cell using a protection layer'20026,479,343'DRAM cell capacitor and manufacturing method thereof'20026,451,651'Method of manufacturing DRAM device invention'20026,424,046'Substrate for manufacturing a semiconductor device with three element alloy'20026,285,053'Capacitor for a semiconductor memory device'20016,197,670'Method for forming self-aligned contact'20016,156,668'Method for forming a fine pattern in a semiconductor device'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2008Based in Kyungki-do, KR· patent location history
2001–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (63)· patent assignee history
2003–2018Based in Suwon-si, KR· patent location history
2005–2014Based in Gyeonggi-do, KR· patent location history
2008–2020Based in Yongin-si, KR· patent location history
2010–2018Patents assigned to KOREA ELECTRIC POWER CORP (3)· patent assignee history
2012–2017Patents assigned to PARK BYUNG-JUN (12)· patent assignee history
2012–2014Patents assigned to PARK BYUNG JUN (4)· patent assignee history
2014Patents assigned to SUNGWOO HITECH CO LTD (4)· patent assignee history
2014Based in Busan, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 63 | 2001–2020 |
| PARK BYUNG-JUNself | 12 | 2012–2017 |
| PARK BYUNG JUNself | 4 | 2012–2014 |
| SUNGWOO HITECH CO LTD | 4 | 2014 |
| KOREA ELECTRIC POWER CORP | 3 | 2010–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 19 | 2008–2020 |
| Kyungki-do, KR | 17 | 2000–2008 |
| Suwon-si, KR | 15 | 2003–2018 |
| Gyeonggi-do, KR | 10 | 2005–2014 |
| Busan, KR | 4 | 2014 |