Inventor

Pascal Guenard

Inventor

Froges, FR

Overview

12→

Patents

2010–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 12 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%

H01LSemiconductor devices14%

H10HInorganic light-emitting semiconductor devices having potential barriers12%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution9%

Y02PClimate change mitigation technologies in the production or processing of goods9%

H03HImpedance networks, e.g. resonant circuits5%

H10NElectric solid-state devices not otherwise provided for5%

A61BDiagnosis4%

PatentTitleYear

10,943,778Method for manufacturing a substrate2021 10,924,081Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device2021 10,608,610Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device2020 9,865,786'Method of manufacturing structures of LEDs or solar cells'2018 9,478,707'Method of manufacturing structures of LEDs or solar cells'2016 9,412,904'Structured substrate for LEDs with high light extraction'2016 9,224,921'Method for forming a buried metal layer structure'2015 9,041,165'Relaxation and transfer of strained material layers'2015 8,785,293'Adaptation of the lattice parameter of a layer of strained material'2014 8,492,244'Methods for relaxation and transfer of strained layers and structures fabricated thereby'2013 7,981,767'Methods for relaxation and transfer of strained layers and structures fabricated thereby'2011 7,736,935'Passivation of semiconductor structures having strained layers'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2021Patents assigned to SOITEC SILICON ON INSULATOR (12)· patent assignee history

2010–2021Based in Froges, FR· patent location history

2013–2015Patents assigned to GUENARD PASCAL (4)· patent assignee history

2013–2015Patents assigned to FAURE BRUCE (2)· patent assignee history

2013–2015Patents assigned to LETERTRE FABRICE (2)· patent assignee history

2015Patents assigned to BETHOUX JEAN-MARC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SOITEC SILICON ON INSULATOR	12	2010–2021
GUENARD PASCALself	4	2013–2015
FAURE BRUCE	2	2013–2015
LETERTRE FABRICE	2	2013–2015
BETHOUX JEAN-MARC	1	2015

Locations

Location	Patents	Span
Froges, FR	12	2010–2021