Inventor
Makoto Okai
Inventor
Tokorozawa, JP
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures21%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light14%
H01JElectric discharge tubes or discharge lamps11%
G02BOptical elements, systems or apparatus7%
H10DInorganic electric semiconductor devices6%
G01QScanning-probe techniques or apparatus5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
C01BNon-metallic elements4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
PatentTitleYear
10,793,938Method for producing boron nitride nanotube-reinforced aluminum composite casting20209,997,771Negative electrode material for lithium ion secondary battery and manufacturing method of the same, negative electrode for lithium ion secondary battery and manufacturing method of the same, and lithium ion secondary battery20188,635,710'Scanning probe microscope and method of observing sample using the same'20148,507,893'Electronic device, light-receiving and light-emitting device, electronic integrated circuit and optical integrated circuit using the devices'20138,476,739'Graphene grown substrate and electronic/photonic integrated circuits using same'20138,471,237'Circuit board including a graphene film having contact region covering a recessed region and a patterned metal film covering the contact region and in direct electrical contact therewith, and device including same'20138,438,660'Micro contact prober'20138,410,474'Graphene grown substrate and electronic/photonic integrated circuits using same'20138,407,811'Scanning probe microscope and method of observing sample using the same'20138,278,658'Electrically connected graphene-metal electrode device, and electronic device, electronic integrated circuit and electro-optical integrated circuit using same'20128,181,268'Scanning probe microscope and method of observing sample using the same'20128,089,428'Flat panel display apparatus'20127,976,950'Transparent conductive film and electronic device including same'20117,732,764'Field emission electron gun and electron beam applied device using the same'20107,400,083'Flat panel display device including electron beam sources and control electrodes'20087,285,901'Display device having a connecting portion between cathode line and electron source'20077,259,511'Flat panel display device with surfaces of cathodes and control electrodes lying in the same flat plane'20077,196,463'Emissive flat panel display having electron sources with high current density and low electric field strength'20077,116,291'Image display and method of driving image display'20066,914,381'Flat panel display with nanotubes'20056,818,941'Thin film electron emitter, display device using the same and applied machine'20046,639,925'Optical information processing equipment and semiconductor light emitting device suitable therefor'20036,570,321'Thin-film electron source, process for manufacturing thin-film electron source, and display'20036,542,526'Optical information processor and semiconductor light emitting device suitable for the same'20036,198,863'Optical filters'20015,699,378'Optical comb filters used with waveguide, laser and manufacturing method of same'19975,666,455'Waveguide device'19975,572,616'Waveguide device'19965,340,637'Optical device diffraction gratings and a photomask for use in the same'19945,177,758'Semiconductor laser device with plural active layers and changing optical properties'19935,119,393'Semiconductor laser device capable of controlling wavelength shift'19924,905,060'Light emitting device with disordered region'19904,894,835'Surface emitting type semiconductor laser'19904,885,753'Semiconductor laser device of variable wavelength type'19894,873,691'Wavelength-tunable semiconductor laser'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2018Patents assigned to HITACHI LTD (26)· patent assignee history
1989–1990Based in Koganei, JP· patent location history
1992–2013Based in Tokorozawa, JP· patent location history
1994–2020Based in Tokyo, JP· patent location history
1997–2001Based in Kokubunji, JP· patent location history
2007–2012Patents assigned to HITACHI DISPLAYS LTD (5)· patent assignee history
2012–2014Patents assigned to OKAI MAKOTO (10)· patent assignee history
2012–2014Patents assigned to HIROOKA MOTOYUKI (8)· patent assignee history
2012–2014Patents assigned to HIDAKA KISHIO (3)· patent assignee history
2014Based in Takorozawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 26 | 1989–2018 |
| OKAI MAKOTOself | 10 | 2012–2014 |
| HIROOKA MOTOYUKI | 8 | 2012–2014 |
| HITACHI DISPLAYS LTD | 5 | 2007–2012 |
| HIDAKA KISHIO | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokorozawa, JP | 25 | 1992–2013 |
| Tokyo, JP | 3 | 1994–2020 |
| Koganei, JP | 3 | 1989–1990 |
| Kokubunji, JP | 2 | 1997–2001 |
| Takorozawa, JP | 1 | 2014 |