Inventor
Nelson Tansu
Inventor
Bethlehem, PA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers34%
B82YSpecific uses or applications of nanostructures20%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light20%
H01LSemiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
C30BSingle-crystal growth2%
H10DInorganic electric semiconductor devices2%
H10NElectric solid-state devices not otherwise provided for2%
PatentTitleYear
10,347,722Artificially engineered III-nitride digital alloy201910,115,859Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer20189,525,117'Thermoelectric materials based on single crystal AlInN—GaN grown by metalorganic vapor phase epitaxy'20169,349,910'Staggered composition quantum well method and device'20168,907,321'Nitride based quantum well light-emitting devices having improved current injection efficiency'20148,685,767'Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes'20148,659,005'Staggered composition quantum well method and device'20148,586,963'Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same'20138,569,737'Broadband light emitting diodes and method for producing same'20138,541,252'Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers'20138,076,667'Efficient light extraction method and device'20118,030,641'Graded in content gallium nitride-based device and method'20117,842,531'Gallium nitride-based device and method'20107,518,139'Gallium nitride-based device and method'20097,457,338'Quantum well lasers with strained quantum wells and dilute nitride barriers'20087,256,417'Type II quantum well mid-infrared optoelectronic devices'20076,845,116'Narrow lateral waveguide laser'20056,791,104'Type II quantum well optoelectronic devices'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2008Patents assigned to WISCONSIN ALUMNI RES FOUND (4)· patent assignee history
2004–2005Based in Madison, WI, US· patent location history
2007–2019Based in Bethlehem, PA, US· patent location history
2009–2019Patents assigned to UNIV LEHIGH (13)· patent assignee history
2011–2018Patents assigned to TANSU NELSON (9)· patent assignee history
2013–2018Patents assigned to LIU GUANGYU (5)· patent assignee history
2013–2018Patents assigned to ZHAO HONGPING (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV LEHIGH | 13 | 2009–2019 |
| TANSU NELSONself | 9 | 2011–2018 |
| LIU GUANGYU | 5 | 2013–2018 |
| ZHAO HONGPING | 5 | 2013–2018 |
| WISCONSIN ALUMNI RES FOUND | 4 | 2004–2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Bethlehem, Pennsylvania, US | 16 | 2007–2019 |
| Madison, WI, US | 2 | 2004–2005 |