Inventor

SANG WAN JIN

Inventor

Overview

2→

Patents

2025–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices40%

H01LSemiconductor devices20%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%

Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use20%

PatentTitleYear

12,588,200Semiconductor device and manufacturing method of the semiconductor device2026 12,245,433Semiconductor memory device and method of manufacturing the same2025

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2025–2026Patents assigned to SK HYNIX INC (2)· patent assignee history

2025–2026Based in KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SK HYNIX INC	2	2025–2026

Locations

Location	Patents	Span
KR	2	2025–2026