Inventor
Yoshiki Saito
Inventor
Kiyosu, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers40%
H01LSemiconductor devices26%
G06FElectric digital data processing14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
C30BSingle-crystal growth3%
H03MCoding3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use3%
PatentTitleYear
10,871,901Memory system202010,853,321Storage system202010,644,204Light emitting element including contact electrode with laminate structure, and method of manufacturing the same202010,461,214Method for producing group III nitride semiconductor light-emitting device201910,223,001Memory system201910,180,795Memory system utilizing a page buffer for prioritizing a subsequent read request over a pending write201910,128,411Light-emitting element201810,096,646Light-emitting unit20189,891,837'Memory system'20189,711,684'Group III nitride semiconductor light-emitting device and production method therefor'20179,331,713'Encoding apparatus, control method of encoding apparatus, and memory device'20169,287,450'Group III nitride semiconductor light-emitting device'20169,263,639'Group III nitride semiconductor light-emitting device'20168,937,318'Light-emitting device having tapered portions of different lengths'20158,928,001'Group III nitride compound semiconductor light emitting element and method for producing the same'20158,765,509'Method for producing group III nitride semiconductor light-emitting device'20148,680,564'Group III nitride semiconductor light-emitting device'20148,598,599'Group III nitride semiconductor light-emitting device'20138,518,806'Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device'20137,948,061'Group III nitride-based compound semiconductor device'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2020Patents assigned to TOYODA GOSEI KK (14)· patent assignee history
2011–2013Based in Aichi, JP· patent location history
2013–2016Patents assigned to SAITO YOSHIKI (5)· patent assignee history
2013–2014Patents assigned to NITTA SHUGO (2)· patent assignee history
2013Patents assigned to OKUNO KOJI (2)· patent assignee history
2013–2020Based in Kiyosu, JP· patent location history
2016–2020Based in Kanagawa, JP· patent location history
2018–2020Patents assigned to TOSHIBA MEMORY CORP (5)· patent assignee history
2018–2020Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOYODA GOSEI KK | 14 | 2011–2020 |
| SAITO YOSHIKIself | 5 | 2013–2016 |
| TOSHIBA MEMORY CORP | 5 | 2018–2020 |
| NITTA SHUGO | 2 | 2013–2014 |
| OKUNO KOJI | 2 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kiyosu, JP | 12 | 2013–2020 |
| Kanagawa, JP | 4 | 2016–2020 |
| Yokohama-shi, Kanagawa, JP | 2 | 2018–2020 |
| Aichi, JP | 2 | 2011–2013 |