Inventor
David H. Chow
Inventor
Newbury Park, CA, US
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
B82YSpecific uses or applications of nanostructures16%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
PatentTitleYear
8,957,455'Modulation doped super-lattice base for heterojunction bipolar transistors'20158,368,119'Integrated structure with transistors and schottky diodes and process for fabricating the same'20138,242,538'Method and device for growing pseudomorphic A1InAsSb on InAs'20128,193,611'High performance InAs-based devices'20128,178,946'Modulation doped super-lattice base for heterojunction bipolar transistors'20127,989,277'Integrated structure with transistors and Schottky diodes and process for fabricating the same'20117,968,435'Method and device for growing pseudomorphic AlInAsSb on InAs'20117,868,335'Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs'20117,800,067'Electronically tunable and reconfigurable hyperspectral photon detector'20107,755,023'Electronically tunable and reconfigurable hyperspectral photon detector'20107,700,969'Type II interband heterostructure backward diodes'20107,652,252'Electronically tunable and reconfigurable hyperspectral photon detector'20107,598,158'Method and device for growing pseudomorphic AlInAsSb on InAs'20097,582,536'Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same'20097,569,872'Bipolar transistors with low parasitic losses'20097,531,851'Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same'20097,514,708'80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio'20097,372,084'Low power bipolar transistors with low parasitic losses'20087,368,765'Bipolar transistors with low parasitic losses'20087,368,764'Heterojunction bipolar transistor and method to make a heterojunction bipolar transistor'20087,266,279'Optically pumped stepped multi-well laser'20077,170,105'Type II interband heterostructure backward diodes'20077,141,446'Optically- and electrically-addressable concentrators of biological and chemical materials'20066,870,234'Optically- and electrically-addressable concentrators of biological and chemical materials'20056,855,948'Low base-emitter voltage heterojunction bipolar transistor'20056,812,070'Epitaxially-grown backward diode'20046,734,470'Laterally varying multiple diodes'20046,727,153'Superlattice fabrication for InAs/GaSb/AlSb semiconductor structures'20046,635,907'Type II interband heterostructure backward diodes'20036,507,043'Epitaxially-grown backward diode'20036,323,696'Sample and hold circuit'20016,320,212'Superlattice fabrication for InAs/GaSb/AISb semiconductor structures'20016,303,941'Integrated asymmetric resonant tunneling diode pair circuit'20015,606,178'Bipolar resonant tunneling transistor'19975,594,750'Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates'19975,577,061'Superlattice cladding layers for mid-infrared lasers'19965,543,628'Quantum well infrared filter'19965,489,786'Current-controlled resonant tunneling device'19965,451,552'Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices'19955,296,721'Strained interband resonant tunneling negative resistance diode'19944,780,331'Method and apparatus for induction charging of powder by contact electrification'1988Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1988Based in Bridgewater, NJ, US· patent location history
1994–1997Patents assigned to HUGHES AIRCRAFT CO (7)· patent assignee history
1994–2015Based in Newbury Park, CA, US· patent location history
1996Based in Newberry Park, CA, US· patent location history
2001–2015Patents assigned to HRL LAB LLC (31)· patent assignee history
2012–2013Patents assigned to CHOW DAVID (3)· patent assignee history
2012–2015Patents assigned to CHOW DAVID H (2)· patent assignee history
2012Patents assigned to ELLIOTT KEN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HRL LAB LLC | 31 | 2001–2015 |
| HUGHES AIRCRAFT CO | 7 | 1994–1997 |
| CHOW DAVIDself | 3 | 2012–2013 |
| CHOW DAVID Hself | 2 | 2012–2015 |
| ELLIOTT KEN | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Newbury Park, California, US | 39 | 1994–2015 |
| Newberry Park, California, US | 1 | 1996 |
| Bridgewater, New Jersey, US | 1 | 1988 |