Inventor
SHENG-YUAN HSUEH
Inventor
TW
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H01LSemiconductor devices21%
H10BElectronic memory devices19%
G11CStatic stores12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10NElectric solid-state devices not otherwise provided for9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
12,500,115Semiconductor device and method for fabricating the same202512,477,814Semiconductor device and method of fabricating the same202512,419,060Data storage cell, memory, and memory fabrication method thereof202512,396,194High electron mobility transistor and method for fabricating the same202512,389,593One-time programmable memory cell202512,261,169Semiconductor device and method for fabricating the same202512,245,424One-time programmable memory capacitor structure and manufacturing method thereof202512,206,018High electron mobility transistor and method for fabricating the same202512,200,947Magnetoresistive random access memory202512,150,314Magnetoresistive random access memory202412,133,377Bit cell structure for one-time-programming202412,132,043Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same202412,119,342Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same202412,009,415High electron mobility transistor and method for fabricating the same202411,973,133High electron mobility transistor and method for fabricating the same202411,956,974Data storage cell, memory, and memory fabrication method thereof202411,895,847Magnetoresistive random access memory202411,864,391Magnetoresistive random access memory202411,856,867MRAM having multilayered interconnect structures202311,854,632Semiconductor memory structure and fabrication method thereof202311,825,648One-time programmable memory structure202311,778,814One-time programmable memory device202311,765,891One-time programmable (OTP) memory cell and fabrication method thereof202311,705,512High electron mobility transistor (HEMT) and forming method thereof202311,688,800High electron mobility transistor and method for fabricating the same202311,665,891One-time programmable memory cell and fabrication method thereof202311,631,761High electron mobility transistor (HEMT) and forming method thereof202311,631,664Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same202311,605,6313D semiconductor structure and method of fabricating the same202311,569,295Magnetoresistive random access memory202311,532,666Magnetoresistive random access memory202211,450,670Semiconductor memory cell and the forming method thereof202211,372,324Method for correcting mask pattern and mask pattern thereof202211,322,215One-time programmable memory device202211,316,031Method of forming fin forced stack inverter202211,296,214High electron mobility transistor (HEMT) and forming method thereof202211,296,036Mark pattern in semiconductor device202211,195,8313D semiconductor structure and method of fabricating the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to UNITED MICROELECTRONICS CORP (38)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 38 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 38 | 2021–2025 |