Inventor
Kaan OGUZ
Inventor
US
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices20%
H10NElectric solid-state devices not otherwise provided for20%
H01LSemiconductor devices19%
G11CStatic stores15%
H01FMagnets11%
H10DInorganic electric semiconductor devices6%
B82YSpecific uses or applications of nanostructures5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
H01GCapacitors1%
G06NComputing arrangements based on specific computational models1%
PatentTitleYear
12,575,165Transistor devices with high-k perovskite gate dielectrics202612,501,628Memory comprising conductive ferroelectric material in series with dielectric material202512,495,559Capacitor with dual dielectric layers202512,484,457Differentially programmable magnetic tunnel junction device and system including same202512,437,929Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor202512,432,948Compositional engineering of Schottky diode202512,328,946ESD protection decoupled from diffusion202512,255,225Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes202512,224,309Capacitors with built-in electric fields202512,100,731Crystalline bottom electrode for perovskite capacitors and methods of fabrication202412,058,847Monolithic memory stack202412,009,018Transition metal dichalcogenide based spin orbit torque memory device202411,818,963Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy202311,696,514Transition metal dichalcogenide based magnetoelectric memory device202311,683,939Spin orbit memory devices with dual electrodes, and methods of fabrication202311,640,995Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer202311,626,451Magnetic memory device with ruthenium diffusion barrier202311,621,391Antiferromagnet based spin orbit torque memory device202311,594,673Two terminal spin orbit memory devices and methods of fabrication202311,575,083Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory202311,574,666Spin orbit torque memory devices and methods of fabrication202311,557,629Spin orbit memory devices with reduced magnetic moment and methods of fabrication202311,508,903Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance202211,502,188Apparatus and method for boosting signal in magnetoelectric spin orbit logic202211,476,412Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory202211,462,678Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same202211,444,237Spin orbit torque (SOT) memory devices and methods of fabrication202211,437,567Perpendicular spin transfer torque magnetic mechanism202211,430,942Multilayer free magnetic layer structure for spin-based magnetic memory202211,430,943Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion202211,417,830Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory202211,404,630Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same202211,393,515Transition metal dichalcogenide based spin orbit torque memory device202211,386,951Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains202211,374,164Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory202211,367,749Spin orbit torque (SOT) memory devices and their methods of fabrication202211,362,263Spin orbit torque (SOT) memory devices and methods of fabrication202211,348,970Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication202211,295,884Perpendicular STTM multi-layer insert free layer202211,276,730Spin orbit torque memory devices and methods of fabrication202211,264,558Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy202211,257,613Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication202211,251,365High blocking temperature spin orbit torque electrode202211,245,068Transition metal dichalcogenide based magnetoelectric memory device202211,227,644Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to INTEL CORP (45)· patent assignee history
2022–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 45 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 45 | 2022–2026 |