Inventor

Erich Griebl

Inventor
Dorfen, DE

Overview

22→
Patents
2004–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
G01RMeasuring electric variables2%
H05KPrinted circuits2%
LOC132%
PatentTitleYear
11,075,290Power semiconductor device having a cross-trench arrangement202111,018,051Power semiconductor device with reliably verifiable p-contact and method202111,011,629Power semiconductor switch with improved controllability202110,629,676Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor device202010,600,862High voltage termination structure of a power semiconductor device202010,424,645Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device201910,304,952Power semiconductor device with dV/dt controllability and cross-trench arrangement201910,177,248Semiconductor device20199,997,359Semiconductor device with rear-side insert structure20189,825,023'Insulated gate bipolar transistor comprising negative temperature coefficient thermistor'20179,666,663'Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device'20179,640,401'Method of manufacturing a semiconductor device having a rear-side insert structure'20179,406,572'Method for processing a substrate and a method of process screening for integrated circuits'20169,385,222'Semiconductor device with insert structure at a rear side and method of manufacturing'20169,224,806'Edge termination structure with trench isolation regions'20159,111,989'Insulated gate bipolar transistor including emitter short regions'20158,815,647'Chip package and a method for manufacturing a chip package'20148,766,430'Semiconductor modules and methods of formation thereof'20147,821,141'Semiconductor device'2010D0609191'Package for electronic device'20107,112,868'IGBT with monolithic integrated antiparallel diode'20066,714,397'Protection configuration for schottky diode'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2021Patents assigned to INFINEON TECHNOLOGIES AG (16)· patent assignee history
2004–2021Based in Dorfen, DE· patent location history
2014Patents assigned to BRUCCHI FABIO (2)· patent assignee history
2014Patents assigned to GRIEBL ERICH (2)· patent assignee history
2017–2020Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (3)· patent assignee history
2021Patents assigned to INFINEON TECH DRESDEN GMBH & CO KG (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INFINEON TECHNOLOGIES AG162004–2021
INFINEON TECH DRESDEN GMBH & CO KG32021
INFINEON TECHNOLOGIES AUSTRIA AG32017–2020
BRUCCHI FABIO22014
GRIEBL ERICHself22014
Locations
LocationPatentsSpan
Dorfen, DE222004–2021