Inventor

Min Dai

Inventor
Mahwah, NJ, US

Overview

36→
Patents
2012–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices28%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H04NPictorial communication, e.g. television12%
G09GArrangements or circuits for control of indicating devices using static means to present variable information6%
H02PControl or regulation of electric motors, electric generators or dynamo-electric converters4%
C23CCoating metallic material3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
A61KPreparations for medical, dental or toiletry purposes1%
B60YIndexing scheme relating to aspects cross-cutting vehicle technology1%
PatentTitleYear
10,631,005System and method for coding in block prediction mode for display stream compression (DSC)202010,482,843Selective reduction of blue light in a display frame201910,463,752Protein polymer gold nanoparticle hybrid materials for small molecule delivery201910,186,232Nonlinear signal scaling for display device power saving20199,843,816'System and method for coding in pattern mode for display stream compression (DSC)'20179,831,084Hydroxyl group termination for nucleation of a dielectric metallic oxide20179,691,662'Field effect transistors having multiple effective work functions'20179,673,108'Fabrication of higher-K dielectrics'20179,639,920'Dither directed LUT output value interpolation'20179,484,427'Field effect transistors having multiple effective work functions'20169,478,173'Adaptive color correction for display with backlight modulation'20169,478,425'Fabrication of higher-k dielectrics'20169,426,414'Reference selection for video interpolation or extrapolation'20169,373,501'Hydroxyl group termination for nucleation of a dielectric metallic oxide'20169,357,233'Video decoder error handling'20169,257,519'Semiconductor device including graded gate stack, related method and design structure'20169,165,510'Temporal control of illumination scaling in a display device'20159,099,461'Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure'20159,080,948'Dynamic peak tracking in X-ray photoelectron spectroscopy measurement tool'20159,059,315'Concurrently forming nFET and pFET gate dielectric layers'20159,029,959'Composite high-k gate dielectric stack for reducing gate leakage'20158,952,460'Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices'20158,953,685'Resource-adaptive video interpolation or extrapolation with motion level analysis'20158,836,037'Structure and method to form input/output devices'20148,835,292'Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer'20148,809,962'Transistor with reduced parasitic capacitance'20148,809,152'Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices'20148,751,192'Methods and systems for assessing vehicle transmissions'20148,735,244'Semiconductor device devoid of an interfacial layer and methods of manufacture'20148,669,616'Method for forming N-shaped bottom stress liner'20148,660,175'Selective display of interpolated or extrapolated video units'20148,575,879'Methods, systems and apparatus for controlling a multi-phase inverter'20138,557,668'Method for forming N-shaped bottom stress liner'20138,519,648'Temperature compensation for improved field weakening accuracy'20138,492,290'Fabrication of silicon oxide and oxynitride having sub-nanometer thickness'20138,294,413'Induction motor control systems and methods'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2012–2016Patents assigned to DAI MIN (18)· patent assignee history
2012–2014Based in Torrance, CA, US· patent location history
2013–2017Patents assigned to IBM (15)· patent assignee history
2013–2017Patents assigned to GLOBALFOUNDRIES INC (8)· patent assignee history
2013–2015Patents assigned to CHUDZIK MICHAEL P (5)· patent assignee history
2013–2017Based in Mahwah, NJ, US· patent location history
2014–2020Patents assigned to QUALCOMM INC (11)· patent assignee history
2014–2016Based in Encinitas, CA, US· patent location history
2014–2017Based in Allendale, NJ, US· patent location history
2015–2020Based in San Diego, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
DAI MINself182012–2016
IBM152013–2017
QUALCOMM INC112014–2020
GLOBALFOUNDRIES INC82013–2017
CHUDZIK MICHAEL P52013–2015
Locations
LocationPatentsSpan
Mahwah, New Jersey, US182013–2017
San Diego, California, US82015–2020
Torrance, California, US42012–2014
Encinitas, California, US32014–2016
Allendale, New Jersey, US22014–2017