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Inventor

Scott L. Hunt

Inventor
West Jordan, UT, US

Overview

4→
Patents
2003–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices60%
A61BDiagnosis20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
8,278,702'High density trench field effect transistor'20128,129,241'Method for forming a shielded gate trench FET'20127,872,305'Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein'20116,599,240'Segmented arm assembly for use with a surgical retractor and instruments and methods related thereto'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003Patents assigned to GENZYME CORP (1)· patent assignee history
2003Based in Franklin, MA, US· patent location history
2011–2012Patents assigned to FAIRCHILD SEMICONDUCTOR (3)· patent assignee history
2011–2012Based in West Jordan, UT, US· patent location history
2012Patents assigned to Hunt Scott L (2)· patent assignee history
2012Patents assigned to PAN JAMES (1)· patent assignee history
2012Patents assigned to PARAVI HOSSEIN (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FAIRCHILD SEMICONDUCTOR32011–2012
Hunt Scott Lself22012
GENZYME CORP12003
PAN JAMES12012
PARAVI HOSSEIN12012
Locations
LocationPatentsSpan
West Jordan, UT, US32011–2012
Franklin, Massachusetts, US12003