Inventor

Satoshi Omata

Inventor

Tokyo, JP

Overview

15→

Patents

1986–1992

Patent span

Electricity

Primary field (CPC H)

Patents· 15 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices23%

G09GArrangements or circuits for control of indicating devices using static means to present variable information12%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution12%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%

B05DProcesses for applying fluent materials to surfaces, in general4%

C23CCoating metallic material4%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%

G06KGraphical data reading4%

G06TImage data processing or generation, in general4%

PatentTitleYear

5,123,048'Speech processing apparatus'1992 5,067,160'Motion-pattern recognition apparatus'1991 4,982,170'Signal processing apparatus'1991 4,982,251'Semiconductor element'1991 4,921,722'Method for forming deposited film'1990 4,905,072'Semiconductor element'1990 4,884,079'Image forming apparatus and driving method therefor'1989 4,881,066'Active matrix-type display panel'1989 4,816,819'Display panel'1989 4,814,842'Thin film transistor utilizing hydrogenated polycrystalline silicon'1989 4,766,477'Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency'1988 4,719,501'Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers'1988 4,675,667'Method for driving liquid-crystal panel'1987 4,645,684'Method for forming deposited film'1987 4,625,224'Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–1992Patents assigned to CANON KK (15)· patent assignee history

1986–1991Based in Tokyo, JP· patent location history

1991–1992Based in Machida, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
CANON KK	15	1986–1992

Locations

Location	Patents	Span
Tokyo, JP	13	1986–1991
Machida, JP	2	1991–1992