Inventor
Tsun-Neng Yang
Inventor
Taipei, TW
Overview
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
Y02Eprimary
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution19%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation15%
Y02PClimate change mitigation technologies in the production or processing of goods9%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H01JElectric discharge tubes or discharge lamps5%
B82YSpecific uses or applications of nanostructures4%
C23CCoating metallic material4%
H01LSemiconductor devices4%
PatentTitleYear
9,570,635'Semiconductor device and patterning method for plated electrode thereof'20179,245,758'Method for fabricating silicon-doped or boron-doped aluminum electrode'20168,921,682'Photovoltaic system able to float on water and track sun'20148,852,995'Preparation method for patternization of metal electrodes in silicon solar cells'20148,685,840'In-situ gettering method for removing metal impurities from the surface and interior of a upgraded metallurgical grade silicon wafer'20148,647,895'Process of manufacturing crystalline silicon solar cell'20148,450,219'Method of fabricating Al2O3 thin film layer'20138,273,650'Method of fabricating thin film interface for internal light reflection and impurities isolation'20128,207,013'Method of fabricating silicon nanowire solar cell device having upgraded metallurgical grade silicon substrate'20128,053,038'Method for making titanium-based compound film of poly silicon solar cell'20118,021,909'Method for making a planar concentrating solar cell assembly with silicon quantum dots'20117,972,942'Method of reducing metal impurities of upgraded metallurgical grade silicon wafer by using epitaxial silicon film'20117,960,292'Method of fabricating zinc oxide film having matching crystal orientation to silicon substrate'20117,951,638'Method for making a textured surface on a solar cell'20117,915,068'Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles'20117,896,723'Method for making a silicon quantum dot fluorescent lamp'20117,892,953'Method for making multi-crystalline film of solar cell'20117,883,387'Pulsed high-voltage silicon quantum dot fluorescent lamp'20117,863,078'Method for making an anti-reflection film of a solar cell'20117,863,080'Process for making multi-crystalline silicon thin-film solar cells'20117,851,249'Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer'20107,674,641'Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots'20107,666,706'Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature'20107,655,575'InN/InP/TiO2 photosensitized electrode'20107,635,603'Method for making red-light emitting diode having silicon quantum dots'20097,615,492'Preparing method of CNT-based semiconductor sensitized solar cell'20097,579,770'Spark-gap white fluorescent lamp having silicon quantum dots and preparing method thereof'20097,569,984'White-light fluorescent lamp having luminescence layer with silicon quantum dots'20097,569,864'Silicon-rich-oxide white light photodiode'20097,485,560'Method for fabricating crystalline silicon thin films'20097,399,654'Method for fabricating optical sensitive layer of solar cell having silicon quantum dots'20087,358,101'Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots'20087,271,021'Light-emitting device with a current blocking structure and method for making the same'20077,163,902'Infra-red light-emitting device and method for preparing the same'20077,115,427'Red light-emitting device and method for preparing the same'20067,009,214'Light-emitting device with a current blocking structure and method for making the same'20066,933,511'Ion implanting apparatus'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2016Patents assigned to ATOMIC ENERGY COUNCIL (31)· patent assignee history
2005–2010Based in Taoyuan, TW· patent location history
2006–2014Based in Taipei, TW· patent location history
2011Patents assigned to ATOMIC ENERGY COUNCIL & MDASH INST OF NUCLEAR ENERGY RES (1)· patent assignee history
2011–2017Based in Taoyuan County, TW· patent location history
2012–2014Patents assigned to YANG TSUN-NENG (6)· patent assignee history
2014Patents assigned to INST NUCLEAR ENERGY RES ATOMIC ENERGY COUNCIL (3)· patent assignee history
2014Patents assigned to ATOMIC ENERGY COUNCIL—INST OF NUCLEAR ENERGY RES (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ATOMIC ENERGY COUNCIL | 31 | 2005–2016 |
| YANG TSUN-NENGself | 6 | 2012–2014 |
| INST NUCLEAR ENERGY RES ATOMIC ENERGY COUNCIL | 3 | 2014 |
| ATOMIC ENERGY COUNCIL & MDASH INST OF NUCLEAR ENERGY RES | 1 | 2011 |
| ATOMIC ENERGY COUNCIL—INST OF NUCLEAR ENERGY RES | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taipei, TW | 27 | 2006–2014 |
| Taoyuan, TW | 6 | 2005–2010 |
| Taoyuan County, TW | 4 | 2011–2017 |