Inventor

Yutaka Onishi

Inventor
Yokohama, JP

Overview

23→
Patents
1991–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light36%
G02BOptical elements, systems or apparatus15%
B82YSpecific uses or applications of nanostructures8%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
H04BTransmission5%
C07CAcyclic or carbocyclic compounds3%
E21DShafts3%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light3%
G04FTime-interval measuring3%
H01LSemiconductor devices3%
PatentTitleYear
11,005,486Atomic oscillator and frequency signal generation system202110,847,950Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser202010,819,083Vertical cavity surface-emitting laser20209,395,487'Wavelength monitor'20169,366,820'Coherent mixer and 2×2 multi-mode interference coupler'20169,279,939'Spot-size converter'20169,164,237'Coherent mixer'20159,122,003'Semiconductor optical device'20159,069,194'Polarization control device'20158,718,412'Dual polarization quadrature phase shift keying optical modulator'20148,617,911'Method for forming coating film on facet of semiconductor optical device'20138,477,820'Semiconductor laser device and method for producing the same'20138,389,308'Method for producing surface emitting semiconductor device'20138,218,591'Laser diode with ridge waveguide structure and method for manufacturing the same'20127,953,135'Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency'20117,852,895'VCSEL with reduced light scattering within optical cavity'20107,852,896'Vertical cavity surface emitting laser'20107,813,403'Vertical cavity surface emitting laser diode and a method for producing the same'20107,809,041'Surface emitting semiconductor laser'20107,738,526'Surface emitting semiconductor laser'20107,668,219'Surface emitting semiconductor device'20107,569,718'Production process of fluorinated benzonitrile'20095,017,045'Method and apparatus for controlling attitude of shield excavator'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991Patents assigned to ISHIKAWAJIMA HARIMA HEAVY IND (1)· patent assignee history
1991Patents assigned to SATO KOGYO (1)· patent assignee history
1991–2016Based in Yokohama, JP· patent location history
2009Based in Kawasaki, JP· patent location history
2010–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (20)· patent assignee history
2012–2016Patents assigned to ONISHI YUTAKA (5)· patent assignee history
2014–2016Based in Yamato, JP· patent location history
2020Based in Osaka, JP· patent location history
2021Patents assigned to SEIKO EPSON CORP (1)· patent assignee history
2021Based in Shiojiri, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES202010–2020
ONISHI YUTAKAself52012–2016
ISHIKAWAJIMA HARIMA HEAVY IND11991
SATO KOGYO11991
SEIKO EPSON CORP12021
Locations
LocationPatentsSpan
Yokohama, JP141991–2016
Yamato, JP52014–2016
Osaka, JP22020
Shiojiri, JP12021
Kawasaki, JP12009