Inventor
CHENG-MING LIN
Inventor
TW
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H01LSemiconductor devices21%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices14%
B82YSpecific uses or applications of nanostructures5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H10BElectronic memory devices2%
C23CCoating metallic material1%
G01BMeasuring length, thickness or similar linear dimensions1%
PatentTitleYear
12,520,562Semiconductor device with germanium-based channel202612,501,670Isolation structure for semiconductor device202512,414,318Fabrication of field effect transistors with ferroelectric materials202512,411,404Method of manufacturing phase shift photo masks202512,336,235Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same202512,315,863Contact structures in semiconductor devices202512,282,260Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask202512,283,616FinFET having a work function material gradient202512,278,287Selective internal gate structure for ferroelectric semiconductor devices202512,248,245Structure and method of reticle pod having inspection window202512,249,770Rotatable antennas202512,218,225Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure202512,136,660Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device202412,136,570Graphene layer for low resistance contacts and damascene interconnects202412,124,163Mask defect prevention202412,107,134Semiconductor device and fabrication method thereof202412,087,579Method for forming semiconductor device202412,055,850Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same202412,034,058Gate stack treatment for ferroelectric transistors202411,953,448Method for defect inspection202411,906,898Method of manufacturing phase shift photo masks202411,901,450Ferroelectric structure for semiconductor devices202411,860,530Mask defect prevention202411,855,164Semiconductor device and fabrication method thereof202311,796,909Structure and method of reticle pod having inspection window202311,662,660Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same202311,621,338Gate stack treatment for ferroelectric transistors202311,594,633Selective internal gate structure for ferroelectric semiconductor devices202311,567,400Method of fabricating a photomask and method of inspecting a photomask202311,402,743Mask defect prevention202211,314,164Structure and method of reticle pod having inspection window202211,282,940Field effect transistors with ferroelectric dielectric materials202211,282,933FinFET having a work function material gradient202211,209,736Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask202111,195,938Device performance by fluorine treatment202111,139,397Self-aligned metal compound layers for semiconductor devices2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (35)· patent assignee history
2021–2026Based in TW· patent location history
2024Patents assigned to TAIWAN SEMICONDUTOR MFG CO LTD (1)· patent assignee history
2025Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (1)· patent assignee history
2025Patents assigned to TAIWAN SEMICONDUCTIR MFG CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 35 | 2021–2026 |
| HEWLETT PACKARD DEVELOPMENT CO | 1 | 2025 |
| TAIWAN SEMICONDUCTIR MFG CO LTD | 1 | 2025 |
| TAIWAN SEMICONDUTOR MFG CO LTD | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 36 | 2021–2026 |