Inventor
James F. Gibbons
Inventor
Palo Alto, CA, US
Overview
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
C23CCoating metallic material9%
C30BSingle-crystal growth9%
F27BFurnaces, kilns, ovens or retorts in general9%
F27DDetails or accessories of furnaces, kilns, ovens or retorts, in so far as they are of kinds occurring in more than one kind of furnace9%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light9%
H02GInstallation of electric cables or lines, or of combined optical and electric cables or lines9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
PatentTitleYear
9,269,633'Method for forming gate electrode with depletion suppression and tunable workfunction'20167,867,859'Gate electrode with depletion suppression and tunable workfunction'20116,434,327'Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature'20026,122,439'Rapid thermal heating apparatus and method'20006,016,383'Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature'20005,840,125'Rapid thermal heating apparatus including a substrate support and an external drive to rotate the same'19985,790,751'Rapid thermal heating apparatus including a plurality of light pipes and a pyrometer for measuring substrate temperature'19985,767,486'Rapid thermal heating apparatus including a plurality of radiant energy sources and a source of processing gas'19985,743,643'Rapid thermal heating apparatus and method'19985,708,755'Rapid thermal heating apparatus and method'19985,689,614'Rapid thermal heating apparatus and control therefor'19975,683,173'Cooling chamber for a rapid thermal heating apparatus'19975,487,127'Rapid thermal heating apparatus and method utilizing plurality of light pipes'19965,317,492'Rapid thermal heating apparatus and method'19945,256,550'Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer'19935,202,284'Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2'19935,155,336'Rapid thermal heating apparatus and method'19925,084,411'Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film'19924,963,500'Method of monitoring semiconductor manufacturing processes and test sample therefor'19904,879,259'Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure'19894,824,489'Ultra-thin solar cell and method'19894,787,551'Method of welding thermocouples to silicon wafers for temperature monitoring in rapid thermal processing'19884,764,439'Photoelectrochemical cell'19884,612,408'Electrically isolated semiconductor integrated photodiode circuits and method'19864,544,418'Process for high temperature surface reactions in semiconductor material'19854,539,431'Pulse anneal method for solar cell'19854,536,785'One transistor dynamic random access memory'19854,490,573'Solar cells'19844,459,343'Nonaqueous electrolyte photoelectrochemical cell'19844,434,318'Solar cells and method'19844,270,018'Amorphous solar cells'19814,243,433'Forming controlled inset regions by ion implantation and laser bombardment'19814,233,671'Read only memory and integrated circuit and method of programming by laser means'19804,227,944'Methods of making composite conductive structures in integrated circuits'19804,219,830'Semiconductor solar cell'19804,214,918'Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam'19804,001,864'Semiconductor p-n junction solar cell and method of manufacture'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–1985Patents assigned to GIBBONS JAMES F (6)· patent assignee history
1977–2016Based in Palo Alto, CA, US· patent location history
1984–1990Patents assigned to SERA SOLAR CORP (8)· patent assignee history
1989–2016Patents assigned to UNIV LELAND STANFORD JUNIOR (3)· patent assignee history
1989Based in Santa Clara, CA, US· patent location history
1992–2002Patents assigned to APPLIED MATERIALS INC (13)· patent assignee history
1992–1993Patents assigned to HEWLETT PACKARD CO (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 13 | 1992–2002 |
| SERA SOLAR CORP | 8 | 1984–1990 |
| GIBBONS JAMES Fself | 6 | 1977–1985 |
| HEWLETT PACKARD CO | 3 | 1992–1993 |
| UNIV LELAND STANFORD JUNIOR | 3 | 1989–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 36 | 1977–2016 |
| Santa Clara, California, US | 1 | 1989 |