Inventor
Beth Baumert
Inventor
Ballston Lake, NY, US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
C23CCoating metallic material14%
C01BNon-metallic elements7%
C01FCompounds of the metals beryllium, magnesium, aluminium, calcium, strontium, barium, radium, thorium, or of the rare-earth metals7%
PatentTitleYear
10,438,853Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage201910,361,289Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same201910,106,892Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same20187,164,566'Electrostatic discharge protection device and method therefore'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007Patents assigned to FREESCALE SEMICONDUCTOR INC (1)· patent assignee history
2007Based in Scottsdale, AZ, US· patent location history
2018–2019Patents assigned to GLOBALFOUNDRIES INC (3)· patent assignee history
2018–2019Based in Ballston Lake, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 3 | 2018–2019 |
| FREESCALE SEMICONDUCTOR INC | 1 | 2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ballston Lake, New York, US | 3 | 2018–2019 |
| Scottsdale, AZ, US | 1 | 2007 |