Inventor
Gert Leusink
Inventor
Saltpoint, NY, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
C23CCoating metallic material25%
H10DInorganic electric semiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01JElectric discharge tubes or discharge lamps4%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems2%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H01LSemiconductor devices2%
Y02CCapture, storage, sequestration or disposal of greenhouse gases [ghg]2%
PatentTitleYear
9,607,888'Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling'20178,722,548'Structures and techniques for atomic layer deposition'20148,580,034'Low-temperature dielectric formation for devices with strained germanium-containing channels'20138,460,945'Method for monitoring status of system components'20138,168,548'UV-assisted dielectric formation for devices with strained germanium-containing layers'20127,674,710'Method of integrating metal-containing films into semiconductor devices'20107,479,454'Method and processing system for monitoring status of system components'20097,419,702'Method for processing a substrate'20087,393,761'Method for fabricating a semiconductor device'20087,300,891'Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation'20077,265,066'Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation'20077,189,431'Method for forming a passivated metal layer'20077,078,341'Method of depositing metal layers from metal-carbonyl precursors'20067,067,422'Method of forming a tantalum-containing gate electrode structure'20066,992,011'Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma'20066,989,321'Low-pressure deposition of metal layers from metal-carbonyl precursors'20066,924,223'Method of forming a metal layer using an intermittent precursor gas flow process'20056,853,953'Method for characterizing the performance of an electrostatic chuck'20056,635,569'Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus'20035,926,737'Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2017Patents assigned to TOKYO ELECTRON LTD (14)· patent assignee history
1999–2005Based in Tempe, AZ, US· patent location history
2005–2014Patents assigned to IBM (7)· patent assignee history
2005–2013Based in Saltpoint, NY, US· patent location history
2006Based in Hopewell Junction, NY, US· patent location history
2012–2014Patents assigned to LEUSINK GERT (4)· patent assignee history
2013–2014Patents assigned to WAJDA CORY (2)· patent assignee history
2014Patents assigned to AOYAMA SHINTARO (1)· patent assignee history
2014Based in Salt Point, NY, US· patent location history
2017Based in Albany, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 14 | 1999–2017 |
| IBM | 7 | 2005–2014 |
| LEUSINK GERTself | 4 | 2012–2014 |
| WAJDA CORY | 2 | 2013–2014 |
| AOYAMA SHINTARO | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saltpoint, New York, US | 14 | 2005–2013 |
| Tempe, AZ, US | 3 | 1999–2005 |
| Albany, New York, US | 1 | 2017 |
| Salt Point, New York, US | 1 | 2014 |
| Hopewell Junction, New York, US | 1 | 2006 |