Inventor

Zoltan Manyoki

Inventor
Kanata, CA

Overview

21→
Patents
1999–2003
Patent span
Physics
Primary field (CPC G)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores48%
H03KPulse technique21%
H03MCoding10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G01RMeasuring electric variables3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
G05FSystems for regulating electric or magnetic variables3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
6,618,306'Semiconductor memory device having row and column redundancy circuit and method of manufacturing the circuit'20036,574,132'Circuit configuration for equalizing different voltages on line runs in integrated semiconductor circuits'20036,538,950'Integrated memory and corresponding operating method'20036,525,974'Integrated memory with redundancy'20036,514,780'METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT HAVING A PARTICULAR FUNCTIONALITY REQUIRED BY A USER OF THE CIRCUIT AND HAVING FIRST STRUCTURES TO PRODUCE THE PARTICULAR FUNCTIONALITY AND SECOND STRUCTURES'20036,496,423'Chip ID register configuration'20026,487,128'Integrated memory having memory cells and reference cells, and operating method for such a memory'20026,480,055'Decoder element for generating an output signal having three different potentials and an operating method for the decoder element'20026,459,626'Integrated memory having memory cells and reference cells, and corresponding operating method'20026,442,100'Integrated memory'20026,429,731'CMOS voltage divider'20026,426,640'Semiconductor module for burn-in test configuration'20026,392,445'Decoder element for producing an output signal having three different potentials'20026,353,562'Integrated semiconductor memory with redundant units for memory cells'20026,259,641'Integrated memory having sense amplifiers disposed on opposite sides of a cell array'20016,255,855'Integrated circuit having a decoder'20016,236,607'Integrated memory having a reference potential and operating method for such a memory'20016,188,273'Integrated circuit having a contact-making point for selecting an operating mode of the integrated circuit'20016,069,486'Circuit configuration for reducing disturbances due to a switching of an output driver'20006,008,695'Input amplifier for input signals with steep edges'19995,994,944'Level converting circuit having a high switching speed'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2001Patents assigned to SIEMENS AG (4)· patent assignee history
1999–2001Based in Munich, DE· patent location history
2001–2003Patents assigned to INFINEON TECHNOLOGIES AG (16)· patent assignee history
2001Patents assigned to INFINEON TECH GMBH (1)· patent assignee history
2001–2003Based in Kanata, CA· patent location history
2002Based in Mchen, DE· patent location history
2002Based in CDN-Kanada, CA· patent location history
2003Based in Kirchhundern, DE· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INFINEON TECHNOLOGIES AG162001–2003
SIEMENS AG41999–2001
INFINEON TECH GMBH12001
Locations
LocationPatentsSpan
Kanata, CA132001–2003
Munich, DE51999–2001
Kirchhundern, DE12003
Mchen, DE12002
CDN-Kanada, CA12002