Inventor
Tatsuro Nagahara
Inventor
Shizuoka, JP
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01LSemiconductor devices13%
C09DCoating compositions, e.g. paints, varnishes or lacquers10%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C11DDetergent compositions7%
C08LCompositions of macromolecular compounds5%
C23CCoating metallic material5%
B05DProcesses for applying fluent materials to surfaces, in general3%
C01BNon-metallic elements3%
PatentTitleYear
10,792,712Substrate processing method and substrate processing apparatus202010,670,969Reverse pattern formation composition, reverse pattern formation method, and device formation method202010,494,261Inorganic polysilazane resin201910,451,974Rinse composition, a method for forming resist patterns and a method for making semiconductor devices201910,191,380Composition for resist patterning and method for forming pattern using same201910,000,386Method for forming of siliceous film and siliceous film formed using same20189,921,481'Fine resist pattern-forming composition and pattern forming method using same'20189,411,232'Composition for forming fine resist pattern, and pattern formation method using same'20169,165,818'Method for forming insulating film'20159,029,071'Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby'20158,969,172'Method for forming isolation structure'20158,889,229'Method for formation of siliceous film and siliceous film formed by the method'20146,902,875'Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof'20055,177,578'Polycrystalline silicon thin film and transistor using the same'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993Based in Ohi, JP· patent location history
2005–2019Based in Shizuoka, JP· patent location history
2014–2015Patents assigned to NAGAHARA TATSURO (4)· patent assignee history
2014Patents assigned to AA ELECTRONICS MATERIALS USA CORP (1)· patent assignee history
2014–2020Based in Kakegawa, JP· patent location history
2015–2020Patents assigned to MERCK PATENT GMBH (4)· patent assignee history
2015Patents assigned to TAKANO YUSUKE (2)· patent assignee history
2018–2020Patents assigned to AZ ELECTRONIC MAT LUXEMBOURG SARL (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AZ ELECTRONIC MAT LUXEMBOURG SARL | 6 | 2018–2020 |
| MERCK PATENT GMBH | 4 | 2015–2020 |
| NAGAHARA TATSUROself | 4 | 2014–2015 |
| TAKANO YUSUKE | 2 | 2015 |
| AA ELECTRONICS MATERIALS USA CORP | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shizuoka, JP | 8 | 2005–2019 |
| Kakegawa, JP | 5 | 2014–2020 |
| Ohi, JP | 1 | 1993 |