Inventor
Xianfeng Zhou
Inventor
Meridian, ID, US
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10BElectronic memory devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
C10GCracking hydrocarbon oils6%
F28DHeat-exchange apparatus, not provided for in another subclass, in which the heat-exchange media do not come into direct contact5%
F28FDetails of heat-exchange and heat-transfer apparatus, of general application5%
H01LSemiconductor devices5%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds3%
F15DFluid dynamics, i.e. methods or means for influencing the flow of gases or liquids3%
PatentTitleYear
10,209,011Heat transfer tube and cracking furnace using the same20199,799,727'Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability'20179,505,677'Steam cracking processes'20169,486,555'Polyhedral oligomeric silsesquioxane (poss)-based bioactive hybrid glass as a scaffold for hard tissue engineering'20169,359,560'Heat transfer tube and cracking furnace using the heat transfer tube'20169,349,632'Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability'20169,181,375'Fluorescent potassium ion sensors'20158,952,485'Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability'20158,585,890'Tubular cracking furnace'20138,304,307'Method of fabricating different gate oxides for different transistors in an integrated circuit'20128,102,006'Different gate oxides thicknesses for different transistors in an integrated circuit'20128,053,321'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20118,035,189'Semiconductor constructions'20117,939,394'Multiple-depth STI trenches in integrated circuit fabrication'20117,790,544'Method of fabricating different gate oxides for different transistors in an integrated circuit'20107,781,860'Semiconductor constructions, and electronic systems'20107,755,146'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20107,696,579'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20107,691,722'Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability'20107,473,615'Semiconductor processing methods'20097,439,140'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20087,413,946'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20087,354,812'Multiple-depth STI trenches in integrated circuit fabrication'20087,304,353'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20077,265,012'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20077,189,607'Formation of standard voltage threshold and low voltage threshold MOSFET devices'20076,849,492'Method for forming standard voltage threshold and low voltage threshold MOSFET devices'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2017Patents assigned to MICRON TECHNOLOGY INC (19)· patent assignee history
2005–2017Based in Meridian, ID, US· patent location history
2010–2015Based in Boise, ID, US· patent location history
2012–2016Patents assigned to ZHOU XIANFENG (6)· patent assignee history
2013–2016Patents assigned to BEIJING RES INST CHEM IND (2)· patent assignee history
2013–2016Patents assigned to CHINA PETROLEUM & CHEMICAL (2)· patent assignee history
2013–2019Based in Beijing, CN· patent location history
2016–2019Patents assigned to CHINA PETROLEUM & CHEM CORP (2)· patent assignee history
2016Based in Akron, OH, US· patent location history
2016Based in Fremont, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 19 | 2005–2017 |
| ZHOU XIANFENGself | 6 | 2012–2016 |
| BEIJING RES INST CHEM IND | 2 | 2013–2016 |
| CHINA PETROLEUM & CHEM CORP | 2 | 2016–2019 |
| CHINA PETROLEUM & CHEMICAL | 2 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Meridian, ID, US | 18 | 2005–2017 |
| Beijing, CN | 4 | 2013–2019 |
| Boise, ID, US | 2 | 2010–2015 |
| Akron, OH, US | 1 | 2016 |
| Fremont, California, US | 1 | 2016 |