LexDanaLexDanabeta
Inventor

Takamitsu Higuchi

Inventor
Matsumoto, JP

Overview

61→
Patents
1996–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 61 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for22%
H03HImpedance networks, e.g. resonant circuits16%
B41JTypewriters12%
Y10TTechnical subjects covered by former us classification10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10DInorganic electric semiconductor devices6%
C30BSingle-crystal growth5%
H10BElectronic memory devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock2%
PatentTitleYear
9,431,597'Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator'20169,148,116'Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator'20158,120,178'Tuning fork vibration device and method for manufacturing the same'20128,004,165'Tuning fork oscillating piece, tuning fork oscillator, and acceleration sensor'20117,954,377'Acceleration sensor incorporating a piezoelectric device'20117,950,282'Acceleration sensor incorporating a piezoelectric device'20117,913,560'Angular rate sensor and electronic device'20117,841,056'Method of manufacturing a piezoelectric element'20107,830,215'Piezoelectric oscillator and method for manufacturing the same'20107,731,933'Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device'20107,707,701'Method for manufacturing a piezoelectric element'20107,601,387'Piezoelectric film laminate and method of manufacturing the same'20097,596,840'Method for manufacturing piezoelectric thin film resonator'20097,575,777'Potassium niobate deposited body and method for manufacturing the same, piezoelectric thin film resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus'20097,565,724'Method of manufacturing a piezoelectric element'20097,522,388'Magnetoresistance effect element having a lower magnetic layer formed over a base substrate through a transition metal oxide layer having a predetermined orientation plane'20097,521,134'Potassium niobate deposited body and method for manufacturing the same, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus'20097,484,280'Method for manufacturing a surface acoustic wave element having an interdigital transducer (IDT) electrode'20097,482,736'Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator'20097,456,553'Piezoelectric film laminate and device including piezoelectric film laminate'20087,436,013'Ferroelectric memory device'20087,422,807'Potassium niobate deposited body and method for manufacturing the same, piezoelectric thin film resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus'20087,345,408'Potassium niobate deposited body and method for manufacturing the same, piezoelectric thin film resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus'20087,310,874'Method for manufacturing a potassium niobate deposited body'20077,310,862'Method for manufacturing a piezoelectric device'20077,279,823'Piezoelectric actuator and liquid jet head'20077,268,472'Piezoelectric device, liquid jetting head, ferroelectric device, electronic device and methods for manufacturing these devices'20077,265,482'Potassium niobate deposited body and method for manufacturing the same, surface acoustic wave device, frequency filter, oscillator, electronic circuit, and electronic apparatus'20077,258,742'Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus'20077,247,551'Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device'20077,244,016'Ink jet head and its manufacturing method, and ink jet printer'20077,238,978'Ferroelectric memory device'20077,223,305'Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electric circuit, and electronic apparatus'20077,216,962'Ink jet recording head and ink jet printer with piezoelectric element'20077,200,907'Method of manufacturing piezoelectric device'20077,197,799'Method for manufacturing a piezoelectric device'20077,196,457'Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet type recording head, ink-jet printer, surface-acoustic-wave element, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus'20077,190,567'Capacitor and its manufacturing method, and semiconductor device'20077,166,954'Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet type recording head, ink-jet printer surface-acoustic-wave element, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus'20077,163,874'Ferroelectric thin film manufacturing method, ferroelectric element manufacturing method, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus'20077,067,955'Method for making potassium niobate thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit and electronic apparatus'20067,033,521'Piezoelectric actuator, ink jet head, and discharge apparatus'20067,011,706'Device substrate and method for producing device substrate'20067,005,947'Surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic instrument'20066,995,634'Surface-acoustic-wave component adapted to electronic circuit and device, and manufacturing method therefor'20066,984,843'Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer'20066,960,539'Substrate for electronic devices, manufacturing method therefor, and electronic device'20056,930,339'Ferroelectric memory and electronic apparatus'20056,849,861'Electronic device and electronic apparatus'20056,841,192'Method for manufacturing piezoelectric element, piezoelectric element, and droplet-ejecting recording head'20056,822,302'Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device'20046,779,878'Piezoelectronic actuator and liquid jetting head'20046,739,703'Piezoelectric actuator and liquid discharge head'20046,737,690'Ferroelectronic memory and electronic apparatus'20046,720,846'Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus'20046,720,599'Ferroelectric memory and electronic apparatus'20046,593,679'Surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus'20036,510,074'Ferroelectric memory having a BaTiO3 recording layer oriented in a <111> direction'20036,121,205'Bulk superconductor and process of preparing same'20005,849,667'Superconductor and method of producing same'19985,525,584'Superconductor and method of producing same'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2000Patents assigned to INT SUPERCONDUCTIVITY TECH (3)· patent assignee history
1996–2000Patents assigned to RAILWAY TECHNICAL RES INST (3)· patent assignee history
1996–1998Patents assigned to SHIKOKU DENRYOKU KABUSHIKIGAIS (2)· patent assignee history
1996–2000Based in Kunitachi, JP· patent location history
2003–2016Patents assigned to SEIKO EPSON CORP (58)· patent assignee history
2003–2016Based in Matsumoto, JP· patent location history
2003–2009Based in Suwa, JP· patent location history
2004–2009Based in Nagano, JP· patent location history
2011Based in Tokyo, JP· patent location history
2012–2015Patents assigned to HIGUCHI TAKAMITSU (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEIKO EPSON CORP582003–2016
INT SUPERCONDUCTIVITY TECH31996–2000
RAILWAY TECHNICAL RES INST31996–2000
HIGUCHI TAKAMITSUself22012–2015
SHIKOKU DENRYOKU KABUSHIKIGAIS21996–1998
Locations
LocationPatentsSpan
Matsumoto, JP442003–2016
Nagano, JP72004–2009
Suwa, JP42003–2009
Kunitachi, JP31996–2000
Tokyo, JP12011