Inventor
Seok-Jun Won
Inventor
Seoul, KR
Overview
Patents· 86 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10BElectronic memory devices13%
C23CCoating metallic material9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H01LSemiconductor devices6%
H01GCapacitors4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
Y10TTechnical subjects covered by former us classification2%
G01FMeasuring volume, volume flow, mass flow or liquid level1%
PatentTitleYear
9,786,785'Semiconductor device, method for fabricating the same, and memory system including the semiconductor device'20179,702,041'Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus'20179,580,800'Method for operating semiconductor manufacturing equipment'20179,583,592'Methods of manufacturing semiconductor devices'20179,553,094'Semiconductor device and method for fabricating the same'20179,431,515'Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layer'20169,406,502'Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus'20169,312,376'Semiconductor device, method for fabricating the same, and memory system including the semiconductor device'20169,287,181'Semiconductor device and method for fabricating the same'20169,275,993'Semiconductor device and method for fabricating the same'20169,218,977'Fabricating method of a semiconductor device'20159,035,398'Semiconductor device and method of fabricating the same'20159,034,714'Method for fabricating semiconductor device'20159,029,244'Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus'20158,389,355'Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same'20138,198,701'Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same'20127,892,966'Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same'20117,888,773'Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same'20117,872,299'Nonvolatile memory devices and methods of fabricating the same'20117,868,421'Analog capacitor'20117,855,431'Capacitor unit and method of forming the same'20107,833,580'Method of forming a carbon nano-material layer using a cyclic deposition technique'20107,807,584'Method of forming metallic oxide films using atomic layer deposition'20107,732,296'Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method'20107,708,969'Method of forming metal oxide'20107,700,454'Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities'20107,679,124'Analog capacitor and method of manufacturing the same'20107,633,112'Metal-insulator-metal capacitor and method of manufacturing the same'20097,623,338'Multiple metal-insulator-metal capacitors and method of fabricating the same'20097,612,399'Semiconductor integrated circuit devices'20097,581,550'Method of cleaning reaction chamber using substrate having catalyst layer thereon'20097,563,672'Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors'20097,554,146'Metal-insulator-metal capacitor and method of fabricating the same'20097,508,649'Multi-layered dielectric film of microelectronic device and method of manufacturing the same'20097,491,654'Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film'20097,481,882'Method for forming a thin film'20097,476,922'Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same'20097,442,982'Capacitor having reaction preventing layer and methods of forming the same'20087,435,654'Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same'20087,429,406'Method of forming thin ruthenium-containing layer'20087,407,897'Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same'20087,394,641'MEMS tunable capacitor with a wide tuning range'20087,371,651'Flat-type capacitor for integrated circuit and method of manufacturing the same'20087,338,879'Method of fabricating a semiconductor device having dual stacked MIM capacitor'20087,332,404'Method of fabricating capacitor having metal electrode'20087,316,961'Method of manufacturing semiconductor device'20087,297,591'Method for manufacturing capacitor of semiconductor device'20077,294,546'Capacitor for a semiconductor device and method of fabricating same'20077,288,453'Method of fabricating analog capacitor using post-treatment technique'20077,271,038'Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby'20077,232,492'Method of forming thin film for improved productivity'20077,203,052'Method of fabricating MEMS tunable capacitor with wide tuning range'20077,199,003'Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor'20077,180,117'Flat-type capacitor for integrated circuit and method of manufacturing the same'20077,180,120'Semiconductor device having dual stacked MIM capacitor and method of fabricating the same'20077,166,541'Method of forming dielectric layer using plasma enhanced atomic layer deposition technique'20077,125,767'Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same'20067,091,548'Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same'20067,084,056'Electrical interconnection, method of forming the electrical interconnection, image sensor having the electrical interconnection and method of manufacturing the image sensor'20067,049,648'Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof'20067,042,042'Integrated circuit capacitors having a dielectric layer between a U-shaped lower electrode and a support layer'20067,042,698'MEMS tunable capacitor with a wide tuning range and method of fabricating the same'20067,018,933'Method of forming a metal-insulator-metal capacitor'20067,008,837'Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode'20067,002,788'Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same'20066,946,342'Semiconductor device and method for manufacturing the same'20056,876,029'Integrated circuit capacitors having doped HSG electrodes'20056,844,610'Integrated circuit devices including a resistor pattern'20056,750,092'Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby'20046,692,795'Method for fabricating semiconductor device having ruthenium layer and equipment for fabricating the same'20046,680,251'Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters'20046,677,217'Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps'20046,667,209'Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operation'20036,653,186'Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layer'20036,653,155'Integrated circuit devices including a resistor pattern and methods for manufacturing the same'20036,649,502'Methods of forming multilayer dielectric regions using varied deposition parameters'20036,624,069'Methods of forming integrated circuit capacitors having doped HSG electrodes'20036,613,629'Methods for manufacturing storage nodes of stacked capacitors'20036,580,111'Metal-insulator-metal capacitor'20036,537,875'Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof'20036,472,319'Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment'20026,416,584'Apparatus for forming a film on a substrate'20026,218,260'Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby'20016,207,489'Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film'20016,136,641'Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere'20006,133,148'Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (85)· patent assignee history
2000–2017Based in Seoul, KR· patent location history
2009Based in Gyeonggi-do, KR· patent location history
2011Based in Gwanak-gu, KR· patent location history
2012–2017Patents assigned to WON SEOK-JUN (5)· patent assignee history
2015–2017Patents assigned to GENITECH INC (3)· patent assignee history
2016–2017Patents assigned to HA YONG-HO (2)· patent assignee history
2016–2017Patents assigned to KIM JU-YOUN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 85 | 2000–2017 |
| WON SEOK-JUNself | 5 | 2012–2017 |
| GENITECH INC | 3 | 2015–2017 |
| HA YONG-HO | 2 | 2016–2017 |
| KIM JU-YOUN | 2 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 84 | 2000–2017 |
| Gwanak-gu, KR | 1 | 2011 |
| Gyeonggi-do, KR | 1 | 2009 |