Inventor
Teruo Sasagawa
Inventor
Los Gatos, CA, US
Overview
Patents· 42 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G02Bprimary
G02BOptical elements, systems or apparatus31%
B81BMicrostructural devices or systems, e.g. micromechanical devices26%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems16%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H10DInorganic electric semiconductor devices3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
9,897,796'Encapsulated spacers for electromechanical systems display apparatus'20189,440,848'Passivated microelectromechanical structures and methods'20169,395,533'Passivated microelectromechanical structures and methods'20169,372,338'Multi-state interferometric modulator with large stable range of motion'20168,552,536'Flexible integrated circuit device layers and processes'20138,547,626'Mechanical layer and methods of shaping the same'20138,445,390'Patterning of antistiction films for electromechanical systems devices'20138,394,656'Method of creating MEMS device cavities by a non-etching process'20138,344,470'Electromechanical devices having support structures'20138,308,962'Etching processes used in MEMS production'20128,218,229'Support structure for MEMS device and methods therefor'20128,149,497'Support structure for MEMS device and methods therefor'20128,120,125'MEMS devices having overlying support structures'20128,098,417'Electromechanical system having a dielectric movable membrane'20128,094,363'Integrated imods and solar cells on a substrate'20128,064,124'Silicon-rich silicon nitrides as etch stops in MEMS manufacture'20117,944,603'Microelectromechanical device and method utilizing a porous surface'20117,936,031'MEMS devices having support structures'20117,889,417'Electromechanical system having a dielectric movable membrane'20117,875,485'Methods of fabricating MEMS devices having overlying support structures'20117,795,061'Method of creating MEMS device cavities by a non-etching process'20107,715,085'Electromechanical system having a dielectric movable membrane and a mirror'20107,711,239'Microelectromechanical device and method utilizing nanoparticles'20107,679,812'Support structure for MEMS device and methods therefor'20107,660,058'Methods for etching layers within a MEMS device to achieve a tapered edge'20107,643,202'Microelectromechanical system having a dielectric movable membrane and a mirror'20107,623,287'Non-planar surface structures and process for microelectromechanical systems'20097,595,926'Integrated IMODS and solar cells on a substrate'20097,580,172'MEMS device and interconnects for same'20097,570,415'MEMS device and interconnects for same'20097,566,940'Electromechanical devices having overlying support structures'20097,564,613'Microelectromechanical device and method utilizing a porous surface'20097,534,640'Support structure for MEMS device and methods therefor'20097,417,784'Microelectromechanical device and method utilizing a porous surface'20087,382,515'Silicon-rich silicon nitrides as etch stops in MEMS manufacture'20086,486,530'Integration of anodized metal capacitors and high temperature deposition capacitors'20026,404,615'Thin film capacitors'20025,260,588'Light-emitting diode array'19935,196,718'Light-emitting diode array'19935,162,878'Light-emitting diode array with projections'19925,132,751'Light-emitting diode array with projections'19925,055,893'Light-emitting diode array with reflective layer'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1993Patents assigned to EASTMAN KODAK CO (5)· patent assignee history
1991–1993Based in Kanagawa, JP· patent location history
1992Based in Kawasaki, JP· patent location history
1993Based in Miyamae, JP· patent location history
2002–2018Based in Los Gatos, CA, US· patent location history
2008–2016Patents assigned to QUALCOMM MEMS TECHNOLOGIES INC (32)· patent assignee history
2011–2013Patents assigned to SASAGAWA TERUO (12)· patent assignee history
2012–2013Patents assigned to CHUI CLARENCE (4)· patent assignee history
2012–2013Patents assigned to KOTHARI MANISH (4)· patent assignee history
2013Based in San Jose, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| QUALCOMM MEMS TECHNOLOGIES INC | 32 | 2008–2016 |
| SASAGAWA TERUOself | 12 | 2011–2013 |
| EASTMAN KODAK CO | 5 | 1991–1993 |
| CHUI CLARENCE | 4 | 2012–2013 |
| KOTHARI MANISH | 4 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Los Gatos, California, US | 36 | 2002–2018 |
| Kanagawa, JP | 2 | 1991–1993 |
| Kawasaki, JP | 2 | 1992 |
| San Jose, California, US | 1 | 2013 |
| Miyamae, JP | 1 | 1993 |