LexDanaLexDanabeta
Inventor

Kangho Lee

Inventor
San Diego, CA, US

Overview

85→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 85 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores24%
H10NElectric solid-state devices not otherwise provided for22%
H01LSemiconductor devices19%
H10BElectronic memory devices13%
G06FElectric digital data processing3%
H01FMagnets3%
H04LTransmission of digital information, e.g. telegraphic communication2%
G01TMeasurement of nuclear or x-radiation2%
G09CCiphering or deciphering apparatus for cryptographic or other purposes involving the need for secrecy2%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
10,797,223Integrated circuits with magnetic random access memory (MRAM) devices and methods for fabricating such devices202010,529,917High energy barrier perpendicular magnetic tunnel junction element with reduced temperature sensitivity202010,510,946MRAM chip magnetic shielding201910,381,554Integrated circuits with magnetic tunnel junctions and methods for fabricating the same201910,297,745Composite spacer layer for magnetoresistive memory201910,121,959FDSOI STT-MRAM design201810,103,319Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices201810,042,061Radiation detector and method of operating the same201810,032,980Integrated circuits with magnetic tunnel junctions and methods for producing the same20189,966,149OTP cell with reversed MTJ connection20189,961,754Method for removing of residual charge, X-ray imaging method and apparatus using the method20189,935,258Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device20189,923,137'Magnetic memory with tunneling magnetoresistance enhanced spacer layer'20189,876,163Magnetic memory with tunneling magnetoresistance enhanced spacer layer20189,865,801'Integrated circuits with magnetic tunnel junctions and methods for producing the same'20189,813,049'Comparator including a magnetic tunnel junction (MTJ) device and a transistor'20179,799,387'Integrated circuits with programmable memory cells and methods for programming the same'20179,736,398'X-ray detecting method, photographing method using the X-ray detecting method, and X-ray detector using the methods'20179,728,718'Magnetic tunnel junction (MTJ) device array'20179,679,663'OTP cell with reversed MTJ connection'20179,666,640'High thermal budget magnetic memory'20179,653,137'STT-MRAM bitcell for embedded flash applications'20179,646,670'Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy'20179,634,237'Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices'20179,620,706'Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device'20179,614,147'Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)'20179,601,687'Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction'20179,595,917'Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer'20179,595,666'Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials'20179,589,619'Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy'20179,583,696'Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction'20179,583,931'Busbar kit'20179,570,509'Magnetic tunnel junction (MTJ) device array'20179,548,446'Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)'20179,547,092'Apparatus and method of detecting X-ray, and X-ray imaging system'20179,548,445'Amorphous alloy space for perpendicular MTJs'20179,461,094'Switching film structure for magnetic random access memory (MRAM) cell'20169,455,014'Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems'20169,444,035'Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication'20169,385,309'Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials'20169,379,314'Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)'20169,368,232'Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control'20169,368,715'Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM)'20169,343,135'Physically unclonable function based on programming voltage of magnetoresistive random-access memory'20169,324,939'Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)'20169,298,946'Physically unclonable function based on breakdown voltage of metal-insulator-metal device'20169,245,610'OTP cell with reversed MTJ connection'20169,245,608'Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device'20169,230,630'Physically unclonable function based on the initial logical state of magnetoresistive random-access memory'20169,224,467'Resistance-based memory having two-diode access device'20159,214,624'Amorphous spacerlattice spacer for perpendicular MTJs'20159,214,214'Physically unclonable function based on the random logical state of magnetoresistive random-access memory'20159,165,631'OTP scheme with multiple magnetic tunnel junction devices in a cell'20159,159,910'One-mask MTJ integration for STT MRAM'20159,142,762'Magnetic tunnel junction and method for fabricating a magnetic tunnel junction'20159,105,340'Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM)'20159,082,962'Magnetic Tunnel Junction (MTJ) on planarized electrode'20159,064,589'Three port MTJ structure and integration'20159,047,964'Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness'20159,043,740'Fabrication of a magnetic tunnel junction device'20158,969,984'Magnetic tunnel junction device'20158,923,044'MTP MTJ device'20148,913,423'Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM)'20148,797,792'Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction'20148,681,536'Magnetic tunnel junction (MTJ) on planarized electrode'20148,638,590'Resistance based memory having two-diode access device'20148,614,912'Magnetic random access memory (MRAM)layout with uniform pattern'20138,592,929'Symmetrically switchable spin-transfer-torque magnetoresistive device'20138,587,993'Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)'20138,580,583'Magnetic tunnel junction device and fabrication'20138,570,797'Magnetic random access memory (MRAM) read with reduced disturb failure'20138,564,079'STT MRAM magnetic tunnel junction architecture and integration'20138,558,331'Magnetic tunnel junction device'20138,547,736'Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction'20138,488,363'Write energy conservation in memory'20138,441,850'Magnetic random access memory (MRAM) layout with uniform pattern'20138,320,167'Programmable write driver for STT-MRAM'20128,248,840'Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements'20128,238,143'Magnetic tunnel junction device and fabrication'20128,208,291'System and method to control a direction of a current applied to a magnetic tunnel junction'20128,120,126'Magnetic tunnel junction device and fabrication'20127,969,767'Spin transfer torque—magnetic tunnel junction device and method of operation'20117,829,923'Magnetic tunnel junction and method of fabrication'2010D0473879'Portion of a display panel or computer screen with an icon image'20036,493,752'Device and method for graphically displaying data movement in a secured network'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2003Based in Redmond, WA, US· patent location history
2010–2018Patents assigned to QUALCOMM INC (65)· patent assignee history
2010–2018Based in San Diego, CA, US· patent location history
2012–2016Patents assigned to LEE KANGHO (23)· patent assignee history
2012–2016Patents assigned to KANG SEUNG H (18)· patent assignee history
2012–2016Patents assigned to ZHU XIAOCHUN (14)· patent assignee history
2017–2020Patents assigned to GLOBALFOUNDRIES SG PTE LTD (13)· patent assignee history
2017–2020Based in Singapore, SG· patent location history
2017–2018Based in Osan-si, KR· patent location history
2018Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
QUALCOMM INC652010–2018
LEE KANGHOself232012–2016
KANG SEUNG H182012–2016
ZHU XIAOCHUN142012–2016
GLOBALFOUNDRIES SG PTE LTD132017–2020
Locations
LocationPatentsSpan
San Diego, California, US692010–2018
Singapore, SG92017–2020
Osan-si, KR32017–2018
Redmond, Washington, US22002–2003
Hwaseong-si, KR12018