Inventor

William Streifer

Inventor
Palo Alto, CA, US

Overview

69→
Patents
1976–1993
Patent span
Electricity
Primary field (CPC H)

Patents· 69 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light58%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
G02BOptical elements, systems or apparatus7%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%
B82YSpecific uses or applications of nanostructures4%
H04BTransmission3%
H04NPictorial communication, e.g. television3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G06KGraphical data reading2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
5,219,785'Method of forming current barriers in semiconductor lasers'19935,193,098'Method of forming current barriers in semiconductor lasers'19935,103,456'Broad beam laser diode with integrated amplifier'19925,088,105'Optical amplifier with folded light path and laser-amplifier combination'19925,048,036'Heterostructure laser with lattice mismatch'19914,995,050'Diode laser with external lens cavity'19914,984,242'GaAs/AlGaAs heterostructure laser containing indium'19914,972,427'Talbot cavity diode laser with uniform single-mode output'19904,933,301'Method of forming a semiconductor laser'19904,862,802'Method of initiating a sequence of pyrotechnic events'19894,831,630'Phased-locked window lasers'19894,826,269'Diode laser arrangement forming bright image'19894,815,084'Semiconductor laser with integrated optical elements'19894,809,288'Hybrid Y-junction laser array'19894,803,691'Lateral superradiance suppressing diode laser bar'19894,799,223'Split contact phased array lasers'19894,719,634'Semiconductor laser array with fault tolerant coupling'19884,719,630'Phased array semiconductor lasers with uniform and stable supermode'19884,718,069'Semiconductor laser array with single lobed output'19884,694,459'Hybrid gain/index guided semiconductor lasers and array lasers'19874,624,000'Phased array semiconductor lasers with preferred emission in a single lobe'19864,606,032'Astable optical multi-vibrator'19864,594,718'Combination index/gain guided semiconductor lasers'19864,575,194'Semiconductor laser beam collimator'19864,555,785'Optical repeater integrated lasers'19854,546,480'Injection lasers with quantum size effect transparent waveguiding'1985RE031806'Monolithic multi-emitting laser device'19854,462,658'Optical scanner'19844,461,007'Injection lasers with short active regions'19844,450,567'Optical repeater integrated lasers'19844,445,125'Diode laser array system for printing and copying applications'19844,433,417'Nonplanar substrate injection lasers grown in vapor phase epitaxy'19844,371,966'Heterostructure lasers with combination active strip and passive waveguide strip'19834,360,921'Monolithic laser scanning device'19824,358,851'Fiber optic laser device and light emitter utilizing the device'19824,349,906'Optically controlled integrated current diode lasers'19824,347,612'Semiconductor injection laser for high speed modulation'19824,347,611'Large optical cavity (LOC) mesa laser'19824,335,461'Injection lasers with lateral spatial thickness variations (LSTV) in the active layer'19824,328,469'High output power injection lasers'19824,317,085'Channeled mesa laser'19824,317,086'Passivation and reflector structure for electroluminescent devices'19824,316,156'Optical repeater integrated lasers'19824,309,670'Transverse light emitting electroluminescent devices'19824,302,729'Channeled substrate laser with distributed feedback'19814,293,826'Hybrid semiconductor laser/detectors'19814,280,108'Transverse junction array laser'19814,280,107'Apertured and unapertured reflector structures for electroluminescent devices'19814,280,106'Striped substrate planar laser'19814,277,762'Mode control of heterojunction injection lasers and method of fabrication'19814,255,717'Monolithic multi-emitting laser device'19814,251,780'Stripe offset geometry in injection lasers to achieve transverse mode control'19814,219,785'Optical beam scanning by phase delays'19804,217,561'Beam scanning using radiation pattern distortion'19804,185,256'Mode control of heterojunction injection lasers and method of fabrication'19804,132,960'Single longitudinal mode GaAs/GaAlAs double heterostructure laser'19794,112,389'Diode laser with ring reflector'19784,111,521'Semiconductor light reflector/light transmitter'19784,077,019'Transverse mode control in double-heterostructure lasers utilizing substrate loss'19784,063,189'Leaky wave diode laser'19774,052,715'Digital half-tone grey scale expansion system'19774,045,749'Corrugation coupled twin guide laser'19774,023,993'Method of making an electrically pumped solid-state distributed feedback laser'19774,014,030'Half-tone imaging with flying spot scanner system'19774,006,432'Integrated grating output coupler in diode lasers'19774,003,649'Electrophotographic halftone printing machine employing a phase screen'19773,997,721'Flying spot scanning system with reduced effective scan angle'19763,970,958'Electrically pumped, solid-state distributed feedback laser with particular grating spacing'19763,969,686'Beam collimation using multiple coupled elements'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1989Patents assigned to XEROX CORP (52)· patent assignee history
1976–1993Based in Palo Alto, CA, US· patent location history
1988–1993Patents assigned to SPECTRA DIODE LAB (16)· patent assignee history
1988Based in Albuquerque, NM, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
XEROX CORP521976–1989
SPECTRA DIODE LAB161988–1993
Locations
LocationPatentsSpan
Palo Alto, California, US681976–1993
Albuquerque, NM, US11988