Inventor

Hai-Dang Trinh

Inventor

Hsinchu, TW

Overview

29→

Patents

2017–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 29 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices28%

H10NElectric solid-state devices not otherwise provided for20%

H10BElectronic memory devices13%

G11CStatic stores8%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

H10DInorganic electric semiconductor devices5%

G06FElectric digital data processing3%

C23CCoating metallic material2%

G06TImage data processing or generation, in general2%

PatentTitleYear

11,131,025Wireless camera wafer for vacuum chamber diagnostics2021 11,121,208MIM capacitor and method of forming the same2021 11,101,307Image sensor having stacked conformal films2021 11,088,239Cap structure for trench capacitors2021 11,038,101Semiconductor structure having a phase change memory device2021 11,024,800Film scheme to improve peeling in chalcogenide based PCRAM2021 11,018,297Memory device structure2021 10,910,560RRAM structure2021 10,868,247Semiconductor device structure with multiple resistance variable layers2020 10,847,718Multi-layer structure to increase crystalline temperature of a selector device2020 10,818,544Method to enhance electrode adhesion stability2020 10,811,600Switching layer scheme to enhance RRAM performance2020 10,804,464Method of forming memory device with diffusion barrier and capping layer2020 10,796,954Semiconductor structure and method for forming the same2020 10,748,798Wireless camera wafer for vacuum chamber diagnostics2020 10,658,581Semiconductor device structure with multiple resistance variable layers2020 10,622,555Film scheme to improve peeling in chalcogenide based PCRAM2020 10,505,107Switching layer scheme to enhance RRAM performance2019 10,497,867Multi-layer structure to increase crystalline temperature of a selector device2019 10,176,866Recap layer scheme to enhance RRAM performance2019 10,163,949Image device having multi-layered refractive layer on back surface2018 10,164,003MIM capacitor and method of forming the same2018 10,164,182Switching layer scheme to enhance RRAM performance2018 10,115,896Semiconductor device and method of manufacturing the same2018 9,978,938Resistive RAM structure and method of fabrication thereof2018 9,954,166Embedded memory device with a composite top electrode2018 9,728,597'Metal-insulator-metal structure and method for forming the same'2017 9,647,207'Resistive random access memory (RRAM) structure'2017 9,627,613'Resistive random access memory (RRAM) cell with a composite capping layer'2017

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2017–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (29)· patent assignee history

2017–2021Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	29	2017–2021

Locations

Location	Patents	Span
Hsinchu, TW	29	2017–2021