Inventor
Christian G. Van de Walle
Inventor
Sunnyvale, CA, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures22%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light19%
H10DInorganic electric semiconductor devices14%
H10HInorganic light-emitting semiconductor devices having potential barriers10%
G01NInvestigating or analysing materials by determining their chemical or physical properties8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy3%
H10KOrganic electric solid-state devices3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
8,617,407'Systems and methods for electrical contacts to arrays of vertically aligned nanorods'20137,811,692'Micro-machined fuel cells'20107,745,272'Method for surfaced-passivated zinc-oxide'20107,569,905'Systems and methods for electrical contacts to arrays of vertically aligned nanorods'20097,459,225'Micro-machined fuel cells'20087,432,526'Surface-passivated zinc-oxide based sensor'20087,202,173'Systems and methods for electrical contacts to arrays of vertically aligned nanorods'20077,123,637'Nitride-based laser diode with GaN waveguide/cladding layer'20066,990,132'Laser diode with metal-oxide upper cladding layer'20066,724,013'Edge-emitting nitride-based laser diode with p-n tunnel junction current injection'20046,605,832'Semiconductor structures having reduced contact resistance'20036,583,449'Semiconductor device and method of forming a semiconductor device'20036,570,898'Structure and method for index-guided buried heterostructure AlGalnN laser diodes'20036,567,443'Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes'20036,541,292'Method for forming an asymmetric nitride laser diode'20036,515,308'Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection'20036,437,374'Semiconductor device and method of forming a semiconductor device'20026,430,202'Structure and method for asymmetric waveguide nitride laser diode'20026,389,051'Structure and method for asymmetric waveguide nitride laser diode'20026,288,417'Light-emitting devices including polycrystalline gan layers and method of forming devices'20016,121,639'Optoelectronic devices based on ZnGeN.sub.2 integrated with group III-V nitrides'20005,828,684'Dual polarization quantum well laser in the 200 to 600 nanometers range'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2006Patents assigned to XEROX CORP (15)· patent assignee history
1998–2010Based in Sunnyvale, CA, US· patent location history
2007–2013Patents assigned to PALO ALTO RES CT INC (7)· patent assignee history
2007–2013Based in Santa Barbara, CA, US· patent location history
2013Patents assigned to HANTSCHEL THOMAS (1)· patent assignee history
2013Patents assigned to JOHNSON NOBLE M (1)· patent assignee history
2013Patents assigned to KIESEL PETER (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| XEROX CORP | 15 | 1998–2006 |
| PALO ALTO RES CT INC | 7 | 2007–2013 |
| HANTSCHEL THOMAS | 1 | 2013 |
| JOHNSON NOBLE M | 1 | 2013 |
| KIESEL PETER | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sunnyvale, California, US | 17 | 1998–2010 |
| Santa Barbara, California, US | 5 | 2007–2013 |