Inventor

Jeong-Hyuk Choi

Inventor

Seoul, KR

Overview

1995–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 65 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices43%

H10DInorganic electric semiconductor devices24%

G11CStatic stores14%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%

G02BOptical elements, systems or apparatus1%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein1%

H01LSemiconductor devices1%

PatentTitleYear

11,086,066Integrated optical sheet module and backlight unit having same2021 8,163,608'Methods of fabricating nonvolatile memory devices'2012 7,977,730'Memory device and fabrication method thereof'2011 7,859,042'Nonvolatile memory devices'2010 7,851,304'Nonvolatile memory device and fabrication method'2010 7,829,931'Nonvolatile memory devices having control electrodes configured to inhibit parasitic coupling capacitance'2010 7,745,287'Floating trap type nonvolatile memory device and method of fabricating the same'2010 7,714,378'Nonvolatile semiconductor integrated circuit devices and fabrication methods thereof'2010 7,687,860'Semiconductor device including impurity regions having different cross-sectional shapes'2010 7,683,422'Non-volatile memory devices with wraparound-shaped floating gate electrodes and methods of forming same'2010 7,589,374'Semiconductor device and related fabrication method'2009 7,538,385'Memory device and fabrication method thereof'2009 7,494,868'Methods of fabricating flash memory devices having a sloped trench isolation structure'2009 7,494,871'Semiconductor memory devices and methods for forming the same'2009 7,449,763'Method of fabricating cell of nonvolatile memory device with floating gate'2008 7,352,035'Flash memory devices and methods for fabricating flash memory devices'2008 7,339,242'NAND-type flash memory devices and fabrication methods thereof'2008 7,317,639'Two-bit charge trap nonvolatile memory device and methods of operating and fabricating the same'2008 7,283,393'NAND flash memory device and method of fabricating the same'2007 7,223,659'Memory device and fabrication method thereof'2007 7,214,588'Methods of forming memory cells with nonuniform floating gate structures'2007 7,122,426'Method of fabricating cell of nonvolatile memory device with floating gate'2006 6,998,669'Memory cells with nonuniform floating gate structures'2006 6,967,373'Two-bit charge trap nonvolatile memory device and methods of operating and fabrication the same'2005 6,927,447'Flash memory devices having a sloped trench isolation structure'2005 6,903,406'Cells of nonvolatile memory device with high inter-layer dielectric constant'2005 6,867,453'Memory device and fabrication method thereof'2005 6,861,685'Floating trap type nonvolatile memory device and method of fabricating the same'2005 6,661,707'Method of programming NAND-type flash memory'2003 6,487,117'Method for programming NAND-type flash memory device using bulk bias'2002 6,483,749'Nonvolatile memory device having bulk bias contact structure in cell array region'2002 6,482,708'Nonvolatile memory device and method for manufacturing the same'2002 6,417,538'Nonvolative semiconductor memory device with high impurity concentration under field oxide layer'2002 6,406,955'Method for manufacturing CMOS devices having transistors with mutually different punch-through voltage characteristics'2002 6,365,457'Method for manufacturing nonvolatile memory device using self-aligned source process'2002 6,347,053'Nonviolatile memory device having improved threshold voltages in erasing and programming operations'2002 6,337,245'Method for fabricating flash memory device and flash memory device fabricated thereby'2002 6,330,187'Nonvolatile memory device and method for manufacturing the same'2001 6,312,990'Structure nonvolatile semiconductor memory cell array and method for fabricating same'2001 6,281,076'Method for manufacturing nonvolatile memory device capable of preventing damage to side walls of stacked gate and active region'2001 6,204,530'Flash-type nonvolatile semiconductor memory devices for preventing overerasure'2001 6,204,122'Methods of forming nonvolatile integrated circuit memory devices having high capacitive coupling ratios'2001 6,197,639'Method for manufacturing NOR-type flash memory device'2001 6,157,575'Nonvolatile memory device and operating method thereof'2000 6,153,469'Method of fabricating cell of flash memory device'2000 6,130,838'Structure nonvolatile semiconductor memory cell array and method for fabricating same'2000 6,121,115'Methods of fabricating integrated circuit memory devices having wide and narrow channel stop layers'2000 6,091,116'CMOS device and method for manufacturing the same'2000 6,028,788'Flash memory device'2000 5,991,203'Circuit and method of erasing a nonvolatile semiconductor memory'1999 5,943,262'Non-volatile memory device and method for operating and fabricating the same'1999 5,932,920'Nonvolatile memory device and manufacturing method thereof'1999 5,841,163'Integrated circuit memory devices having wide and narrow channel stop layers'1998 5,834,352'Methods of forming integrated circuits containing high and low voltage field effect transistors therein'1998 5,830,790'High voltage transistor of semiconductor memory devices'1998 5,792,696'Nonvolatile memory device and manufacturing method thereof'1998 5,790,457'Nonvolatile integrated circuit memory devices having ground interconnect lattices with reduced lateral dimensions'1998 5,789,294'Manufacturing method of nonvolatile memory'1998 5,729,491'Nonvolatile integrated circuit memory devices having ground interconnect lattices with reduced lateral dimensions'1998 5,712,588'Fuse element for a semiconductor memory device'1998 5,712,178'Non-volatile semiconductor memory device and method for manufacturing the same'1998 5,663,084'Method for manufacturing nonvolatile semiconductor memory device'1997 5,661,323'Integrated circuit fuse programming and reading circuits'1997 5,590,072'Nonvolatile semiconductor memory device'1996 5,472,892'Method of making a non-volatile floating gate memory device with peripheral transistor'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2012Patents assigned to SAMSUNG ELECTRONICS CO LTD (63)· patent assignee history

1996–2001Based in Seoul, KR· patent location history

1997Patents assigned to SAMSUNG ELECTRIC (1)· patent assignee history

1999–2002Based in Suwon-si, KR· patent location history

2005–2012Based in Gyeonggi-do, KR· patent location history

2005–2011Based in Yongin, KR· patent location history

2007–2010Based in Seongnam-si, KR· patent location history

2012Patents assigned to CHOI JEONG-HYUK (1)· patent assignee history

2012Patents assigned to PARK BONG-TAE (1)· patent assignee history

2021Patents assigned to LMS CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	63	1995–2012
CHOI JEONG-HYUKself	1	2012
LMS CO LTD	1	2021
PARK BONG-TAE	1	2012
SAMSUNG ELECTRIC	1	1997

Locations

Location	Patents	Span
Seoul, KR	15	1996–2001
Suwon-si, KR	13	1999–2002
Gyeonggi-do, KR	11	2005–2012
Yongin, KR	6	2005–2011
Seongnam-si, KR	5	2007–2010