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Inventor

Andrew E. Souzis

Inventor
Hawthorne, NJ, US

Overview

6→
Patents
2009–2021
Patent span
Chemistry
Primary field (CPC C)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth43%
Y10TTechnical subjects covered by former us classification29%
B28DWorking stone or stone-like materials14%
H01BCables14%
PatentTitleYear
RE048378Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof2021RE046315'Large diameter, high quality SiC single crystals, method and apparatus'20179,090,989'Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof'20158,741,413'Large diameter, high quality SiC single crystals, method and apparatus'20148,216,369'System for forming SiC crystals having spatially uniform doping impurities'20127,608,524'Method of and system for forming SiC crystals having spatially uniform doping impurities'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2017Patents assigned to II VI INC (5)· patent assignee history
2009–2021Based in Hawthorne, NJ, US· patent location history
2012Patents assigned to BARRETT DONOVAN L (1)· patent assignee history
2012Patents assigned to GUPTA AVINASH K (1)· patent assignee history
2012Patents assigned to SEMENAS EDWARD (1)· patent assignee history
2021Patents assigned to II VI DELAWARE INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
II VI INC52009–2017
BARRETT DONOVAN L12012
GUPTA AVINASH K12012
II VI DELAWARE INC12021
SEMENAS EDWARD12012
Locations
LocationPatentsSpan
Hawthorne, New Jersey, US62009–2021