Inventor

SHAU-LIN SHUE

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 133 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices36%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1036%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

H10DInorganic electric semiconductor devices10%

B82YSpecific uses or applications of nanostructures2%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%

C09GPolishing compositions0%

PatentTitleYear

12,581,928Interconnect structure with protective etch-stop2026 12,564,045Semiconductor device structure with interconnect structure having air gap2026 12,550,694Selective deposition for integrated circuit interconnect structures2026 12,543,551Selective formation of conductor nanowires2026 12,543,550Interconnects including graphene capping and graphene barrier layers2026 12,538,773Semiconductor structure having self-aligned conductive structure and method for forming the semiconductor structure2026 12,525,531Protection liner on interconnect wire to enlarge processing window for overlying interconnect via2026 12,525,538Semiconductor device structure and methods of forming the same2026 12,512,404Interconnect structure including contact via over barrier layer2025 12,512,403Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layer2025 12,500,173Interconnect structure with hybrid barrier layer2025 12,482,703Semiconductor device having thermally conductive air gap structure and method for manufacturing the same2025 12,482,743Interconnect structure and method for forming the same2025 12,463,134Semiconductor interconnection structure and methods of forming the same2025 12,431,386Semiconductor device having metallization layer with low capacitance and method for manufacturing the same2025 12,412,780Semiconductor device structure and methods of forming the same2025 12,412,804Semiconductor structure with improved heat dissipation2025 12,394,633Method of fabricating semiconductor device with reduced trench distortions2025 12,381,143Self-align via structure by selective deposition2025 12,381,113Semiconductor device structure having air gap and methods of forming the same2025 12,374,637Semiconductor packages and methods for forming the same2025 12,362,233Methods of performing chemical-mechanical polishing process in semiconductor devices2025 12,347,776Integrated chip with graphene based interconnect2025 12,342,600Titanium-containing diffusion barrier for CMP removal rate enhancement and contamination reduction2025 12,327,760Interconnect structures having varied materials2025 12,315,811Graphene barrier layer for reduced contact resistance2025 12,308,286Interconnect structures including air gaps2025 12,278,143Method of providing a workpiece including low resistance interconnect low-resistance interconnect2025 12,272,623Semiconductor packages and methods for forming the same2025 12,272,597Semiconductor interconnection structures and methods of forming the same2025 12,266,565Integrated chip with an etch-stop layer forming a cavity2025 12,249,555Semiconductor device package including a thermal conductive layer and methods of forming the same2025 12,230,537Semiconductor device structure having air gap and methods of forming the same2025 12,230,534Semiconductor device and method of manufacture2025 12,218,060Integrated chip with graphene based interconnect2025 12,211,788Hybrid interconnect structure for self aligned via2025 12,211,740Interconnect structure and methods of forming the same2025 12,211,799Semiconductor packages and methods for forming the same2025 12,205,886Hybrid method for forming semiconductor interconnect structure2025 12,176,246Dielectric capping structure overlying a conductive structure to increase stability2024 12,165,945Thermal interconnect structure for thermal management of electrical interconnect structure2024 12,166,026Semiconductor packages and methods for forming the same2024 12,159,814Semiconductor packages and methods for forming the same2024 12,142,557Integrated chip having a back-side power rail2024 12,136,567Fully self-aligned interconnect structure2024 12,132,000Semiconductor device structure and methods of forming the same2024 12,113,021Graphene-assisted low-resistance interconnect structures and methods of formation thereof2024 12,094,848Semiconductor packages and methods for forming the same2024 12,094,764Interconnect structure and methods of forming the same2024 12,094,816Semiconductor structure having deep metal line and method for forming the semiconductor structure2024 12,094,815Semiconductor structure having dielectric-on-dielectric structure and method for forming the semiconductor structure2024 12,080,593Barrier-less structures2024 12,074,060Semiconductor device structure and methods of forming the same2024 12,074,084Heat dispersion layers for double sided interconnect2024 12,068,193Semiconductor device structure with interconnect structure having air gap2024 12,068,254Interconnection structure and methods of forming the same2024 12,068,248Semiconductor interconnection structure and methods of forming the same2024 12,062,572Semiconductor device having metallization layer with low capacitance and method for manufacturing the same2024 12,051,683Semiconductor packages and methods for forming the same2024 12,033,889Semiconductor device structure and methods of forming the same2024 12,009,301Interconnect structure2024 12,009,202Using a self-assembly layer to facilitate selective formation of an etching stop layer2024 12,002,750Interconnect structure2024 12,002,749Barrier and air-gap scheme for high performance interconnects2024 11,990,400Capping layer overlying dielectric structure to increase reliability2024 11,972,975Semiconductor device structure having air gap and method for forming the same2024 11,967,552Methods of forming interconnect structures in semiconductor fabrication2024 11,948,834Selective deposition of barrier layer2024 11,935,783Selective deposition for integrated circuit interconnect structures2024 11,929,326Method of forming graphene barrier layer in interconnect structure2024 11,929,258Via connection to a partially filled trench2024 11,923,243Semiconductor structure having air gaps and method for manufacturing the same2024 11,923,306Semiconductor structure having air gaps and method for manufacturing the same2024 11,908,792Semiconductor device comprising cap layer over dielectric layer and method of manufacture2024 11,908,794Protection liner on interconnect wire to enlarge processing window for overlying interconnect via2024 11,908,789Selective formation of conductor nanowires2024 11,901,221Interconnect strucutre with protective etch-stop2024 11,901,349Semiconductor packages and methods for forming the same2024 11,894,238Method of fabricating semiconductor device with reduced trench distortions2024 11,894,266Metal capping layer and methods thereof2024 11,860,550Multi-metal fill with self-aligned patterning and dielectric with voids2024 11,854,944Semiconductor packages and methods for forming the same2023 11,854,987Semiconductor packages with interconnection features in a seal region and methods for forming the same2023 11,854,963Semiconductor interconnection structure and methods of forming the same2023 11,854,820Spacer etching process for integrated circuit design2023 11,848,190Barrier-less structures2023 11,810,815Dielectric capping structure overlying a conductive structure to increase stability2023 11,769,695Semiconductor structure including low-resistance interconnect and integrated circuit device having the same2023 11,764,106Semiconductor device and method of manufacture2023 11,756,878Self-aligned via structure by selective deposition2023 11,749,643Semiconductor packages and methods for forming the same2023 11,742,239Methods of performing chemical-mechanical polishing process in semiconductor devices2023 11,735,513Integrated chip having a back-side power rail2023 11,728,264Hybrid interconnect structure for self aligned via2023 11,721,627Graphene layer for reduced contact resistance2023 11,715,689Method of forming metal interconnection2023 11,710,700Graphene-assisted low-resistance interconnect structures and methods of formation thereof2023 11,670,595Semiconductor device structure and methods of forming the same2023 11,658,092Thermal interconnect structure for thermal management of electrical interconnect structure2023 11,652,055Interconnect structure with hybrid barrier layer2023 11,640,940Methods of forming interconnection structure including conductive graphene layers2023 11,640,928Heat dispersion layers for double sided interconnect2023 11,640,924Structure and method for interconnection with self-alignment2023 11,594,483Semiconductor structure2023 11,569,124Interconnect structure having an etch stop layer over conductive lines2023 11,557,511Semiconductor device structure and methods of forming the same2023 11,545,389Titanium-containing diffusion barrier for CMP removal rate enhancement and contamination reduction2023 11,538,749Interconnect structure2022 11,532,552Method and apparatus for forming self-aligned via with selectively deposited etching stop layer2022 11,527,435Metal capping layer and methods thereof2022 11,482,447Method of forming an integrated chip having a cavity between metal features2022 11,482,451Interconnect structures2022 11,462,470Method of forming graphene and metallic cap and barrier layers for interconnects2022 11,450,602Hybrid method for forming semiconductor interconnect structure2022 11,422,475Multi-metal fill with self-aligned patterning and dielectric with voids2022 11,404,366Hybrid interconnect structure for self aligned via2022 11,387,113Method of fabricating semiconductor device with reduced trench distortions2022 11,361,989Method for manufacturing interconnect structures including air gaps2022 11,361,994Fully self-aligned interconnect structure2022 11,355,390Interconnect strucutre with protective etch-stop2022 11,355,430Capping layer overlying dielectric structure to increase reliability2022 11,335,596Selective deposition for integrated circuit interconnect structures2022 11,322,395Dielectric capping structure overlying a conductive structure to increase stability2022 11,309,241Protection liner on interconnect wire to enlarge processing window for overlying interconnect via2022 11,296,026Semiconductor device and manufacturing method thereof2022 11,251,073Selective deposition of barrier layer2022 11,227,833Interconnect structure and method for forming the same2022 11,222,843Interconnect structure and method for forming the same2022 11,211,256Method with CMP for metal ion prevention2021 11,205,618Graphene barrier layer2021 11,201,106Semiconductor device with conductors embedded in a substrate2021 11,189,560Semiconductor device comprising etch stop layer over dielectric layer and method of manufacture2021 11,152,255Methods of performing chemical-mechanical polishing process in semiconductor devices2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (133)· patent assignee history

2021–2026Based in TW· patent location history

2022Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	133	2021–2026
TAIWAN SEMICONDUCTOR MFG	1	2022

Locations

Location	Patents	Span
TW	133	2021–2026