Inventor

Tadaharu Minato

Inventor

Hyogo, JP

Overview

1992–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices49%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

H01LSemiconductor devices3%

H10BElectronic memory devices2%

B23KSoldering or unsoldering1%

C30BSingle-crystal growth1%

G01RMeasuring electric variables1%

G06FElectric digital data processing1%

PatentTitleYear

10,866,272Simulation circuit and simulation method2020 9,691,619'Laser annealing device with multiple lasers'2017 9,673,308'Semiconductor device manufacturing method'2017 9,299,818'Insulating gate-type bipolar transistor'2016 8,482,030'Insulated gate bipolar transistor and manufacturing method thereof'2013 8,377,832'Method for manufacturing semiconductor device'2013 8,329,563'Semiconductor device including a gettering layer and manufacturing method therefor'2012 7,955,930'Semiconductor device and manufacturing method thereof'2011 7,829,898'Power semiconductor device having raised channel and manufacturing method thereof'2010 7,701,003'Semiconductor device and manufacturing method thereof'2010 7,253,031'Semiconductor device and manufacturing method thereof'2007 7,105,387'Semiconductor device and manufacturing method for the same'2006 7,067,874'Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round'2006 7,009,239'Vertical semiconductor device and manufacturing method thereof'2006 6,949,798'Semiconductor device'2005 6,897,493'Semiconductor device'2005 6,867,437'Semiconductor device'2005 6,821,824'Semiconductor device and method of manufacturing the same'2004 6,710,401'Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round'2004 6,693,310'Semiconductor device and manufacturing method thereof'2004 6,518,144'Semiconductor device having trenches and process for same'2003 6,465,871'Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device'2002 6,445,012'Semiconductor device and manufacturing method thereof'2002 6,331,466'Insulated gate semiconductor device and manufacturing method thereof'2001 6,323,508'Insulated gate semiconductor device and manufacturing method thereof'2001 6,307,246'Semiconductor resurf devices formed by oblique trench implantation'2001 6,265,735'Semiconductor device and manufacturing method thereof'2001 6,252,259'Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device'2001 6,225,649'Insulated-gate bipolar semiconductor device'2001 6,107,650'Insulated gate semiconductor device and manufacturing method thereof'2000 6,103,578'Method for forming high breakdown semiconductor device'2000 6,100,575'Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device'2000 6,040,600'Trenched high breakdown voltage semiconductor device'2000 5,977,570'Semiconductor device and manufacturing method thereof'1999 5,925,899'Vertical type insulated gate bipolar transistor having a planar gate structure'1999 5,783,491'Method of forming a truck MOS gate or a power semiconductor device'1998 5,773,851'Semiconductor device and manufacturing method thereof'1998 5,736,438'Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same'1998 5,578,522'Semiconductor device and method of fabricating same'1996 5,514,880'Field effect thin-film transistor for an SRAM with reduced standby current'1996 5,510,274'Method of controlling a carrier lifetime in a semiconductor switching device'1996 5,508,534'Trench gate type insulated gate bipolar transistor'1996 5,144,402'Semiconductor switching device and method of controlling a carrier life time in a semiconductor switching device'1992 5,086,330'Bipolar semiconductor switching device'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2020Patents assigned to MITSUBISHI ELECTRIC CORP (44)· patent assignee history

1992–2002Based in Itami, JP· patent location history

1996–1998Patents assigned to RYODEN SEMICONDUCTOR SYST ENG (2)· patent assignee history

1996–2007Based in Hyogo, JP· patent location history

1996–2006Based in Kobe, JP· patent location history

2006–2020Based in Tokyo, JP· patent location history

2010–2011Based in Chiyoda-ku, JP· patent location history

2012–2017Patents assigned to MINATO TADAHARU (5)· patent assignee history

2013–2016Patents assigned to AONO SHINJI (2)· patent assignee history

2017Patents assigned to KANADA KAZUNORI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MITSUBISHI ELECTRIC CORP	44	1992–2020
MINATO TADAHARUself	5	2012–2017
AONO SHINJI	2	2013–2016
RYODEN SEMICONDUCTOR SYST ENG	2	1996–1998
KANADA KAZUNORI	1	2017

Locations

Location	Patents	Span
Hyogo, JP	19	1996–2007
Tokyo, JP	9	2006–2020
Itami, JP	8	1992–2002
Kobe, JP	6	1996–2006
Chiyoda-ku, JP	2	2010–2011