Inventor
Fred C. Redeker
Inventor
Fremont, CA, US
Overview
Patents· 161 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
B24BMachines, devices, or processes for grinding or polishing16%
B08BCleaning in general8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
C23CCoating metallic material5%
H01JElectric discharge tubes or discharge lamps5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B24DTools for grinding, buffing or sharpening4%
C11DDetergent compositions4%
C25DProcesses for the electrolytic or electrophoretic production of coatings4%
PatentTitleYear
10,875,145Polishing pads produced by an additive manufacturing process202010,821,573Polishing pads produced by an additive manufacturing process202010,800,000Multi-layered nano-fibrous CMP pads202010,786,885Thin plastic polishing article for CMP applications202010,562,147Polishing system with annular platen or polishing pad for substrate monitoring202010,537,974CMP pad construction with composite material properties using additive manufacturing processes202010,493,691Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles201910,456,886Porous chemical mechanical polishing pads201910,384,330Polishing pads produced by an additive manufacturing process201910,322,491Printed chemical mechanical polishing pad201910,199,281Substrate features for inductive monitoring of conductive trench depth201910,086,500Method of manufacturing a UV curable CMP polishing pad20189,911,664'Substrate features for inductive monitoring of conductive trench depth'20189,873,180CMP pad construction with composite material properties using additive manufacturing processes20189,776,361'Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles'20179,669,512'CMP pads having material composition that facilitates controlled conditioning'20179,486,893'Conditioning of grooving in polishing pads'20168,716,210'Material for cleaning a substrate'20148,671,959'Method and apparatus for cleaning a substrate using non-newtonian fluids'20148,608,859'Method for removing contamination from a substrate and for making a cleaning solution'20138,591,662'Methods for cleaning a semiconductor substrate'20138,555,903'Method and apparatus for removing contamination from substrate'20138,522,799'Apparatus and system for cleaning a substrate'20138,522,801'Method and apparatus for cleaning a semiconductor substrate'20138,490,573'Method and apparatus for material deposition'20138,419,917'Electroplating head and method for operating the same'20138,403,727'Pre-planarization system and method'20138,330,072'System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology'20128,316,866'Method and apparatus for cleaning a semiconductor substrate'20128,137,474'Cleaning compound and method and system for using the cleaning compound'20128,048,283'Method and apparatus for plating semiconductor wafers'20118,043,441'Method and apparatus for cleaning a substrate using non-Newtonian fluids'20117,975,708'Proximity head with angled vacuum conduit system, apparatus and method'20117,947,157'Apparatus and method for depositing and planarizing thin films of semiconductor wafers'20117,875,554'Method for electroless depositing a material on a surface of a wafer'20117,862,693'Apparatus for plating semiconductor wafers'20117,862,662'Method and material for cleaning a substrate'20117,749,689'Methods for providing a confined liquid for immersion lithography'20107,737,097'Method for removing contamination from a substrate and for making a cleaning solution'20107,704,367'Method and apparatus for plating semiconductor wafers'20107,696,141'Cleaning compound and method and system for using the cleaning compound'20107,675,000'System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology'20107,648,584'Method and apparatus for removing contamination from substrate'20107,645,364'Apparatus and method for plating semiconductor wafers'20107,604,011'Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid'20097,596,886'Method and system to separate and recycle divergent chemistries'20097,591,613'Method and apparatus for transporting a substrate using non-newtonian fluid'20097,582,565'Method and apparatus for semiconductor wafer planarization'20097,563,348'Electroplating head and method for operating the same'20097,542,134'System, method and apparatus for in-situ substrate inspection'20097,503,983'Methods of proximity head brushing'20097,497,767'Vibration damping during chemical mechanical polishing'20097,464,719'Multi-menisci processing apparatus'20087,416,370'Method and apparatus for transporting a substrate using non-Newtonian fluid'20087,413,627'Deposition chamber and method for depositing low dielectric constant films'20087,395,611'System processing a substrate using dynamic liquid meniscus'20087,397,555'System, method and apparatus for in-situ substrate inspection'20087,368,017'Method and apparatus for semiconductor wafer planarization'20087,367,345'Apparatus and method for providing a confined liquid for immersion lithography'20087,358,186'Method and apparatus for material deposition in semiconductor fabrication'20087,353,560'Proximity brush unit apparatus and method'20087,350,315'Edge wheel dry manifold'20087,331,847'Vibration damping in chemical mechanical polishing system'20087,264,007'Method and apparatus for cleaning a substrate using megasonic power'20077,252,736'Compliant grinding wheel'20077,252,097'System and method for integrating in-situ metrology within a wafer process'20077,231,682'Method and apparatus for simultaneously cleaning the front side and back side of a wafer'20077,232,761'Method of chemical mechanical polishing with high throughput and low dishing'20077,220,322'Cu CMP polishing pad cleaning'20077,201,636'Chemical mechanical polishing a substrate having a filler layer and a stop layer'20077,191,787'Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid'20077,153,188'Temperature control in a chemical mechanical polishing system'20067,153,400'Apparatus and method for depositing and planarizing thin films of semiconductor wafers'20067,143,527'System and method for modulating flow through multiple ports in a proximity head'20067,127,831'Methods and systems for processing a substrate using a dynamic liquid meniscus'20067,108,591'Compliant wafer chuck'20067,104,267'Planarized copper cleaning for reduced defects'20067,090,562'Methods of and apparatus for pre-planarizing a substrate'20067,069,937'Vertical proximity processor'20067,048,608'Semiconductor wafer material removal apparatus and method for operating the same'20067,041,599'High through-put Cu CMP with significantly reduced erosion and dishing'20067,040,332'Method and apparatus for megasonic cleaning with reflected acoustic waves'20067,040,330'Method and apparatus for megasonic cleaning of patterned substrates'20067,014,545'Vibration damping in a chemical mechanical polishing system'20067,003,899'System and method for modulating flow through multiple ports in a proximity head'20066,991,517'Linear polishing sheet with window'20066,988,327'Methods and systems for processing a substrate using a dynamic liquid meniscus'20066,960,521'Method and apparatus for polishing metal and dielectric substrates'20056,921,494'Backside etching in a scrubber'20056,872,329'Chemical mechanical polishing composition and process'20056,869,332'Chemical mechanical polishing of a metal layer with polishing rate monitoring'20056,864,181'Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition'20056,863,593'Chemical mechanical polishing a substrate having a filler layer and a stop layer'20056,858,540'Selective removal of tantalum-containing barrier layer during metal CMP'20056,858,265'Technique for improving chucking reproducibility'20056,855,043'Carrier head with a modified flexible membrane'20056,832,948'Thermal preconditioning fixed abrasive articles'20046,833,052'Deposition chamber and method for depositing low dielectric constant films'20046,796,880'Linear polishing sheet with window'20046,797,074'Wafer edge cleaning method and apparatus'20046,790,768'Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects'20046,783,432'Additives for pressure sensitive polishing compositions'20046,780,773'Method of chemical mechanical polishing with high throughput and low dishing'20046,739,951'Method and apparatus for electrochemical-mechanical planarization'20046,676,497'Vibration damping in a chemical mechanical polishing system'20046,669,538'Pad cleaning for a CMP system'20036,659,849'Platen with debris control for chemical mechanical planarization'20036,656,842'Barrier layer buffing after Cu CMP'20036,645,061'Polishing pad having a grooved pattern for use in chemical mechanical polishing'20036,638,143'Ion exchange materials for chemical mechanical polishing'20036,632,124'Optical monitoring in a two-step chemical mechanical polishing process'20036,629,881'Method and apparatus for controlling slurry delivery during polishing'20036,620,027'Method and apparatus for hard pad polishing'20036,602,724'Chemical mechanical polishing of a metal layer with polishing rate monitoring'20036,592,438'CMP platen with patterned surface'20036,589,610'Deposition chamber and method for depositing low dielectric constant films'20036,585,563'In-situ monitoring of linear substrate polishing operations'20036,575,177'Semiconductor substrate cleaning system'20036,572,453'Multi-fluid polishing process'20036,569,349'Additives to CMP slurry to polish dielectric films'20036,561,873'Method and apparatus for enhanced CMP using metals having reductive properties'20036,537,144'Method and apparatus for enhanced CMP using metals having reductive properties'20036,523,553'Wafer edge cleaning method and apparatus'20036,520,840'CMP slurry for planarizing metals'20036,509,269'Elimination of pad glazing for Al CMP'20036,506,097'Optical monitoring in a two-step chemical mechanical polishing process'20036,485,359'Platen arrangement for a chemical-mechanical planarization apparatus'20026,468,362'Method and apparatus for cleaning/drying hydrophobic wafers'20026,465,051'Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling'20026,435,944'CMP slurry for planarizing metals'20026,436,302'Post CU CMP polishing for reduced defects'20026,435,942'Chemical mechanical polishing processes and components'20026,436,832'Method to reduce polish initiation time in a polish process'20026,432,826'Planarized Cu cleaning for reduced defects'20026,416,823'Deposition chamber and method for depositing low dielectric constant films'20026,379,223'Method and apparatus for electrochemical-mechanical planarization'20026,358,124'Pad conditioner cleaning apparatus'20026,309,276'Endpoint monitoring with polishing rate change'20016,273,806'Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus'20016,251,187'Gas distribution in deposition chambers'20016,220,942'CMP platen with patterned surface'20016,220,201'High density plasma CVD reactor with combined inductive and capacitive coupling'20016,217,430'Pad conditioner cleaning apparatus'20016,182,602'Inductively coupled HDP-CVD reactor'20016,179,709'In-situ monitoring of linear substrate polishing operations'20016,170,428'Symmetric tunable inductively coupled HDP-CVD reactor'20016,162,368'Technique for chemical mechanical polishing silicon'20006,083,344'Multi-zone RF inductively coupled source configuration'20006,070,551'Deposition chamber and method for depositing low dielectric constant films'20006,015,591'Deposition method'20005,984,769'Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus'19995,944,902'Plasma source for HDP-CVD chamber'19995,865,896'High density plasma CVD reactor with combined inductive and capacitive coupling'19995,800,621'Plasma source for HDP-CVD chamber'19985,788,799'Apparatus and method for cleaning of semiconductor process chamber surfaces'19985,772,771'Deposition chamber for improved deposition thickness uniformity'19985,761,023'Substrate support with pressure zones having reduced contact area and temperature feedback'19985,748,434'Shield for an electrostatic chuck'19985,705,225'Method of filling pores in anodized aluminum parts'19985,454,903'Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization'19955,292,399'Plasma etching apparatus with conductive means for inhibiting arcing'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2020Patents assigned to APPLIED MATERIALS INC (101)· patent assignee history
1994–2020Based in Fremont, CA, US· patent location history
2005–2014Patents assigned to LAM RES CORP (60)· patent assignee history
2008–2009Based in Alameda, CA, US· patent location history
2012–2014Patents assigned to REDEKER FRED C (13)· patent assignee history
2012–2014Patents assigned to KOROLIK MIKHAIL (9)· patent assignee history
2012–2014Patents assigned to FREER ERIK M (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 101 | 1994–2020 |
| LAM RES CORP | 60 | 2005–2014 |
| REDEKER FRED Cself | 13 | 2012–2014 |
| KOROLIK MIKHAIL | 9 | 2012–2014 |
| FREER ERIK M | 8 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 159 | 1994–2020 |
| Alameda, California, US | 2 | 2008–2009 |