LexDanaLexDanabeta
Inventor

Matthew Donofrio

Inventor
Raleigh, NC, US

Overview

86→
Patents
2007–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 86 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers30%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
LOC136%
B23KSoldering or unsoldering4%
H10DInorganic electric semiconductor devices4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
B28DWorking stone or stone-like materials2%
C30BSingle-crystal growth2%
PatentTitleYear
11,034,056Silicon carbide wafers with relaxed positive bow and related methods202111,024,501Carrier-assisted method for parting crystalline material along laser damage region202110,991,861Low optical loss flip chip solid state lighting device202110,910,352High density pixelated LED and devices and methods thereof202110,797,201High voltage monolithic LED chip202010,658,546High efficiency LEDs and methods of manufacturing202010,611,052Silicon carbide wafers with relaxed positive bow and related methods202010,576,585Laser-assisted method for parting crystalline material202010,562,130Laser-assisted method for parting crystalline material202010,529,696High density pixelated LED and devices and methods thereof202010,439,107Chip with integrated phosphor201910,421,158Laser-assisted method for parting crystalline material201910,312,224High density pixelated LED and devices and methods thereof201910,283,681Phosphor-converted light emitting device201910,135,877Enforcing usage policies on combinations of collected data to be disseminated to destination systems201810,115,860High voltage monolithic LED chip201810,083,885Multi-layer potting for electronic modules20189,948,683Enforcing usage policies on combinations of collected data to be disseminated to destination systems20189,831,220Light emitting diode (LED) arrays including direct die attach and related assemblies20179,754,926'Light emitting diode (LED) arrays including direct die attach and related assemblies'20179,728,676'High voltage monolithic LED chip'20179,673,363'Reflective mounting substrates for flip-chip mounted horizontal LEDs'20179,660,153'Gap engineering for flip-chip mounted horizontal LEDs'20179,640,737'Horizontal light emitting diodes including phosphor particles'20179,608,166'Localized annealing of metal-silicon carbide ohmic contacts and devices so formed'20179,508,904'Structures and substrates for mounting optical elements and methods and devices for providing the same background'20169,496,458'Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same'20169,490,235'Light emitting devices, systems, and methods'20169,443,903'Low temperature high strength metal stack for die attachment'20169,444,024'Methods of forming optical conversion material caps'20169,437,785'Light emitting diodes including integrated backside reflector and die attach'20169,437,783'Light emitting diode (LED) contact structures and process for fabricating the same'20169,397,266'Lateral semiconductor light emitting diodes having large area contacts'20169,349,596'Methods of processing semiconductor wafers having silicon carbide power devices thereon'20169,281,445'Methods of fabricating light emitting diodes by masking and wet chemical etching'20169,243,777'Rare earth optical elements for LED lamp'20169,166,126'Conformally coated light emitting devices and methods for providing the same'20159,115,870'LED lamp and hybrid reflector'20159,053,958'Light emitting diode (LED) arrays including direct die attach and related assemblies'20158,957,430'Gel underfill layers for light emitting diodes'20158,940,561'Systems and methods for application of optical materials to optical elements'20158,896,008'Light emitting diodes having group III nitride surface features defined by a mask and crystal planes'20148,878,209'High efficiency group III nitride LED with lenticular surface'20148,866,150'Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts'20148,704,240'Light emitting devices having current reducing structures'20148,698,184'Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature'20148,692,267'High efficiency Group III nitride LED with lenticular surface'20148,686,429'LED structure with enhanced mirror reflectivity'20148,643,039'Lateral semiconductor Light Emitting Diodes having large area contacts'20148,575,633'Light emitting diode with improved light extraction'2013D0691973'Lamp packages'2013D0691569'LED chip'20138,558,252'White LEDs with emission wavelength correction'2013D0689830'Light emitting diode'2013D0689209'Lamp packages'2013D0689031'LED chip'20138,525,190'Conformal gel layers for light emitting diodes'2013D0689210'Lamp packages'2013D0682225'Light emitting diode'20138,436,368'Methods of forming light emitting devices having current reducing structures'2013D0675580'Light emitting diode'2013D0675581'Light emitting diode'20138,368,100'Semiconductor light emitting diodes having reflective structures and methods of fabricating same'20138,357,923'External extraction light emitting diode based upon crystallographic faceted surfaces'2013D0673125'Light emitting diode'2012D0673126'LED chip'2012D0672731'Light emitting diode'20128,263,995'Three dimensional features on light emitting diodes for improved light extraction'20128,247,836'Nickel tin bonding system with barrier layer for semiconductor wafers and devices'20128,216,867'Front end scribing of light emitting diode (LED) wafers and resulting devices'20128,193,544'Color correction for wafer level white LEDs'20128,183,588'High efficiency group III nitride LED with lenticular surface'20128,174,037'High efficiency group III nitride LED with lenticular surface'20128,163,577'Methods of forming light emitting devices having current reducing structures'20128,154,039'High efficiency group III nitride LED with lenticular surface'20128,017,963'Light emitting diode with a dielectric mirror having a lateral configuration'2011D0635525'LED chip'20117,910,945'Nickel tin bonding system with barrier layer for semiconductor wafers and devices'20117,897,419'Color correction for wafer level white LEDs'20117,829,906'Three dimensional features on light emitting diodes for improved light extraction'20107,795,623'Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures'20107,791,061'External extraction light emitting diode based upon crystallographic faceted surfaces'20107,547,578'Methods of processing semiconductor wafers having silicon carbide power devices thereon'20097,419,912'Laser patterning of light emitting devices'20087,384,809'Method of forming three-dimensional features on light emitting diodes for improved light extraction'20087,291,529'Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2021Patents assigned to CREE INC (83)· patent assignee history
2007–2021Based in Raleigh, NC, US· patent location history
2012–2017Patents assigned to DONOFRIO MATTHEW (47)· patent assignee history
2012–2017Patents assigned to EDMOND JOHN ADAM (15)· patent assignee history
2012–2017Patents assigned to HABERERN KEVIN (9)· patent assignee history
2012–2017Patents assigned to BERGMANN MICHAEL JOHN (7)· patent assignee history
2018Based in Commack, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CREE INC832007–2021
DONOFRIO MATTHEWself472012–2017
EDMOND JOHN ADAM152012–2017
HABERERN KEVIN92012–2017
BERGMANN MICHAEL JOHN72012–2017
Locations
LocationPatentsSpan
Raleigh, NC, US842007–2021
Commack, New York, US22018