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Inventor

Feng-Ming Hsieh

Inventor
Hsinchu, TW

Overview

4→
Patents
2016–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices17%
H01LSemiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
B05CApparatus for applying fluent materials to surfaces, in general8%
C08CTreatment or chemical modification of rubbers8%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds8%
C08LCompositions of macromolecular compounds8%
F17DPipe-line systems8%
G01MTesting static or dynamic balance of machines or structures8%
PatentTitleYear
11,131,931Fluidic leakage handling for semiconductor apparatus202110,976,676Contamination handling for semiconductor apparatus202110,745,550Epoxy resin composition20209,346,908'Olefin-metathesis catalysts and method for preparing low-molecular-weight nitrile butadiene rubber'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016–2020Patents assigned to IND TECH RES INST (2)· patent assignee history
2016–2020Based in Tainan, TW· patent location history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (2)· patent assignee history
2021Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IND TECH RES INST22016–2020
TAIWAN SEMICONDUCTOR MFG CO LTD22021
Locations
LocationPatentsSpan
Hsinchu, TW22021
Tainan, TW22016–2020