Inventor
Yongxiang Wen
Inventor
Hangzhou, CN
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B81Bprimary
B81BMicrostructural devices or systems, e.g. micromechanical devices14%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems14%
H01LSemiconductor devices14%
H02NElectric machines not otherwise provided for14%
H10DInorganic electric semiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
PatentTitleYear
10,770,340Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process202010,513,431Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereof201910,081,541Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereof20189,824,913'Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2020Patents assigned to HANGZHOU SILAN INTEGRATED CIRCUIT CO LTD (4)· patent assignee history
2017–2020Patents assigned to HANGZHOU SILAN MICROELECT CO (2)· patent assignee history
2017–2020Based in Hangzhou, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HANGZHOU SILAN INTEGRATED CIRCUIT CO LTD | 4 | 2017–2020 |
| HANGZHOU SILAN MICROELECT CO | 2 | 2017–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hangzhou, CN | 4 | 2017–2020 |