Inventor

CHANG-MIAO LIU

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 53 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices29%

H01LSemiconductor devices24%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%

B82YSpecific uses or applications of nanostructures15%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

H10BElectronic memory devices2%

H10NElectric solid-state devices not otherwise provided for2%

PatentTitleYear

12,575,134Multi-gate devices with reduced contact resistance and methods of forming the same2026 12,550,358Method of forming transistors of different configurations2026 12,527,050Integrated circuit structure with source/drain spacers2026 12,513,979Semiconductor device2025 12,453,154Dielectric constant reduction of gate spacer2025 12,414,330Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereof2025 12,414,331Isolation for multigate devices2025 12,389,653Semiconductor devices and methods of fabricating the same2025 12,363,935Methods for forming multi-gate transistors2025 12,356,703Air spacer formation for semiconductor devices2025 12,349,384Isolation structures in multi-gate semiconductor devices and methods of fabricating the same2025 12,349,432Enlarged backside contact2025 12,324,218Semiconductor devices with air gaps and the method thereof2025 12,317,550Methods of forming a semiconductor device with corner isolation protection2025 12,278,276Multi-channel devices and method with anti-punch through process2025 12,230,720Semiconductor structure with recessed top semiconductor layer in substrate and method of fabricating the same2025 12,218,013Gate structures for semiconductor devices2025 12,183,806Semiconductor devices and methods of fabricating the same2024 12,166,071Dielectric fins with air gap and backside self-aligned contact2024 12,166,075Method and structure for gate-all-around devices2024 12,132,096Semiconductor device structure with metal gate stack2024 12,113,118Stress-inducing silicon liner in semiconductor devices2024 12,100,625Semiconductor device with air gaps between metal gates and method of forming the same2024 12,062,707Method of manufacturing a field effect transistor by tilted implantation of dopants into inner sidewalls of gate spacers2024 12,015,055Doping for semiconductor device with conductive feature2024 11,991,936Method of forming a FinFET device2024 11,973,128Methods for forming multi-gate transistors2024 11,948,998Isolation structures in multi-gate semiconductor devices and methods of fabricating the same2024 11,935,954Semiconductor device structure and method for forming the same2024 11,916,105Semiconductor device with corner isolation protection and methods of forming the same2024 11,854,906Gate structures for semiconductor devices2023 11,855,155Semiconductor device having contact feature and method of fabricating the same2023 11,837,631Source/drain spacer with air gap in semiconductor devices and methods of fabricating the same2023 11,837,662Devices with strained isolation features2023 11,769,819Semiconductor device structure with metal gate stack2023 11,756,835Semiconductor device with air gaps between metal gates and method of forming the same2023 11,742,386Doping for semiconductor device with conductive feature2023 11,728,405Stress-inducing silicon liner in semiconductor devices2023 11,715,803Method of forming transistors of different configurations2023 11,688,647Semiconductor device and method for manufacturing the same2023 11,688,768Integrated circuit structure with source/drain spacers2023 11,600,695Dielectric fins with air gap and backside self-aligned contact2023 11,594,680Method of forming a FinFET device2023 11,527,444Air spacer formation for semiconductor devices2022 11,450,741Doping for semiconductor device with conductive feature2022 11,444,179Isolation structures in multi-gate semiconductor devices and methods of fabricating the same2022 11,430,890Integrated circuits with channel-strain liner2022 11,387,146Semiconductor device with air gaps between metal gates and method of forming the same2022 11,362,217Method of forming transistors of different configurations2022 11,355,615FinFET having fluorine-doped gate sidewall spacers2022 11,302,784Semiconductor device having contact feature and method of fabricating the same2022 11,145,650Gate cut dielectric feature and method of forming the same2021 11,139,432Methods of forming a FinFET device2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (53)· patent assignee history

2021–2026Based in TW· patent location history

2025Patents assigned to TAIWAN SEMICONDUCTOR MANUFACTUIRNG CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	53	2021–2026
TAIWAN SEMICONDUCTOR MANUFACTUIRNG CO LTD	1	2025

Locations

Location	Patents	Span
TW	53	2021–2026