Inventor
HIROYUKI NAGASAWA
Inventor
JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
C30BSingle-crystal growth17%
C23CCoating metallic material11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
11,862,460SiC multilayer body, production method therefor, and semiconductor device202411,346,018Silicon carbide substrate production method and silicon carbide substrate202211,208,719SiC composite substrate and method for manufacturing same202111,177,123Compound semiconductor laminate substrate, method for manufacturing same, and semiconductor element2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2024Patents assigned to CUSIC INC (4)· patent assignee history
2021–2022Patents assigned to SHINETSU CHEMICAL CO (3)· patent assignee history
2021–2024Based in JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CUSIC INC | 4 | 2021–2024 |
| SHINETSU CHEMICAL CO | 3 | 2021–2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 4 | 2021–2024 |